Two-dimensional HfS-ZrS lateral heterojunction FETs with high rectification and photocurrent

Multifunctional devices are an indispensable choice to fulfil the increasing demand for miniaturized and integrated circuit systems. However, bulk material-based devices encounter the challenge of miniaturized all-in-one systems with multiple functions. In this study, we designed a field effect transistor (FET) based on a monolayer HfS 2 -ZrS 2 lateral heterojunction. It possesses simultaneous and obvious rectifying behavior and photodetection characteristics in the visible light region, such as the rectification ratio of ∼10 12 , photocurrent density of 13.3 nA m −1 , responsivity of 57 mA W −1 , and extinction ratio of 108. Notably, the rectification ratio of the single-gate FET is larger than that of the dual-gate FET under the negative gate voltage. These results indicate that monolayer lateral heterojunction-based FETs can provide an effective route to integrate rectifying and photodetection functions in single optoelectronic nanodevices. The field effect transistor based on monolayer HfS 2 -ZrS 2 lateral heterojunction provides an effective route to integrate rectifying and photodetection functions in single opto-electronic nanodevice.