Tunability in the optoelectrical performance of n-SnSSe thin films for photovoltaic applications

2D tin chalcogenides are promising materials for thin-film solar cells due to their excellent characteristics. SnS 1− x Se x alloy films have garnered attention from researchers over the last few decades due to their tunable physical features. Here, we report the successful preparation of SnS 1− x Se x powder using a temperature-assisted mechanochemical process and their subsequent deposition on glass substrates via thermal evaporation. X-ray diffraction (XRD) and Raman spectroscopy were used to extensively analyse SnS 1− x Se x thin films, elucidating their structural characteristics. The presence of a ternary alloy has been verified by both energy dispersive X-ray spectroscopy (EDAX) and X-ray photoelectron spectroscopy (XPS). The absorption spectrum shows that TSSe thin films have great potential for absorbing a wide range of visible light. Hall measurement revealed that n-type TSSe thin films have shown great promise with the highest hall mobility of up to 16.7 cm 2 V 1 s 1 . Our study demonstrates that TSSe has excellent potential as a 2D material for cutting-edge photovoltaic applications. 2D tin chalcogenides are promising materials for thin-film solar cells due to their excellent characteristics.