Polymorphism in AMF (A = Rb, Cs; M = Al, Ga) grown using mixed halide fluxes
Single crystals of A 3 MF 6 (A = Rb, Cs; M = Al, Ga) were grown from mixed alkali chloride/fluoride fluxes in sealed silver tubes. For Cs 3 AlF 6 and Cs 3 GaF 6 , two polymorphs were observed at room temperature: m -Cs 3 MF 6 and o -Cs 3 MF 6 . For the two Rb containing compositions, only one room t...
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Veröffentlicht in: | Dalton transactions : an international journal of inorganic chemistry 2023-06, Vol.52 (24), p.8425-8433 |
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Zusammenfassung: | Single crystals of A
3
MF
6
(A = Rb, Cs; M = Al, Ga) were grown from mixed alkali chloride/fluoride fluxes in sealed silver tubes. For Cs
3
AlF
6
and Cs
3
GaF
6
, two polymorphs were observed at room temperature:
m
-Cs
3
MF
6
and
o
-Cs
3
MF
6
. For the two Rb containing compositions, only one room temperature polymorph was observed:
o
-Rb
3
AlF
6
and
t
-Rb
3
GaF
6
, respectively. Simultaneous TGA/DSC and high temperature SCXRD/PXRD were used to study the high temperature behavior of A
3
MF
6
. The compounds of all four compositions were found to undergo structure transitions upon heating to the same cubic structure type,
c
-A
3
MF
6
.
Single crystals of A
3
MF
6
(A = Rb, Cs; M = Al, Ga) were grown from mixed alkali chloride/fluoride fluxes. The polymorphism of each compound was studied
via
TGA/DSC and high temperature X-ray diffraction. |
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ISSN: | 1477-9226 1477-9234 |
DOI: | 10.1039/d3dt00352c |