Alloying enhanced negative Poisson's ratio in two-dimensional aluminum gallium nitride (AlGaN)

The negative Poisson's ratio (NPR) effect usually endows materials with promising ductility and shear resistance, facilitating a wider range of applications. It has been generally acknowledged that alloys show strong advantages in manipulating material properties. Thus, a thought-provoking ques...

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Veröffentlicht in:Physical chemistry chemical physics : PCCP 2024-02, Vol.26 (8), p.71-719
Hauptverfasser: Wang, Xiaoxia, Tang, Zhunyun, Yu, Linfeng, Wei, Donghai, Yuan, Zonghao, Tang, Chao, Wang, Huimin, Ouyang, Tao, Qin, Guangzhao
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Sprache:eng
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Zusammenfassung:The negative Poisson's ratio (NPR) effect usually endows materials with promising ductility and shear resistance, facilitating a wider range of applications. It has been generally acknowledged that alloys show strong advantages in manipulating material properties. Thus, a thought-provoking question arises: how does alloying affect the NPR? In this paper, based on first-principles calculations, we systematically study the NPR in two-dimensional (2D) GaN and AlN, and their alloy of Al x Ga 1− x N. It is intriguing to find that the NPR in Al x Ga 1− x N is significantly enhanced compared to the parent materials of GaN and AlN. The underlying mechanism mainly originates from a counter-intuitive increase of the bond angle . We further study the microscopic origin of the anomalies by electron orbital analysis as well as electron localization functions. It is revealed that the distribution and movement of electrons change with the applied strain, providing a fundamental view on the effect of strain on lattice parameters and the NPR. The physical origin as revealed in this study deepens the understanding of the NPR and shed light on the future design of modern nanoscale electromechanical devices with fantastic functions based on the auxetic nanomaterials and nanostructures. Based on first-principles calculations, we systematically study the NPR in two-dimensional (2D) GaN and AlN, and their alloy of Al x Ga 1− x N. Intriguingly, the NPR in Al x Ga 1− x N is significantly enhanced compared to the parent materials of GaN and AlN.
ISSN:1463-9076
1463-9084
DOI:10.1039/d3cp05031a