Manipulating the metal-to-insulator transitions of VO by combining compositing and doping strategies

Vanadium dioxide (VO 2 ) exhibits the most abrupt metal-to-insulator transition (MIT) property near room temperature among the representative 3d-orbital correlated oxides, and its structural variation during the MIT usually results in poor mechanical properties as bulk pellets. Moreover, compositing...

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Veröffentlicht in:Physical chemistry chemical physics : PCCP 2023-08, Vol.25 (33), p.21908-21915
Hauptverfasser: Zhou, Xuanchi, Li, Haifan, Shang, Yanlong, Meng, Fanqi, Li, Ziang, Meng, Kangkang, Wu, Yong, Xu, Xiaoguang, Jiang, Yong, Chen, Nuofu, Chen, Jikun
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Zusammenfassung:Vanadium dioxide (VO 2 ) exhibits the most abrupt metal-to-insulator transition (MIT) property near room temperature among the representative 3d-orbital correlated oxides, and its structural variation during the MIT usually results in poor mechanical properties as bulk pellets. Moreover, compositing with highly resistive oxides has been reported to improve the mechanical strength of bulk VO 2 since the generation and propagation of microcracks is suppressed upon thermocycling across the MIT; further, their respective impacts on electrical transportation are yet unclear. Herein, we demonstrate the role of these highly resistive oxide composites ( e.g. , HfO 2 , CoO and Al 2 O 3 ) in reducing charge leakage along the microcracks within the insulating phase of VO 2 , leading to more abrupt MIT properties from the perspective of electrical transportation. This enables the possibility of simultaneously regulating the critical temperature and abrupt MIT transition, as well as the mechanical properties of the VO 2 bulk pellets via compositing with oxides with different melting points using spark plasma-assisted reactive sintering (SPARS). The simultaneous regulations of the mechanical strength and the metal-to-insulator transition are achieved in the VO 2 bulk, respectively, via compositing VO 2 with high-melting-point oxides and substituting vanadium with high-valent dopants.
ISSN:1463-9076
1463-9084
DOI:10.1039/d3cp02224b