Nanochannel-dependent power generation performance of NiAl-LDH/SiO-based generators driven by natural water evaporation

Natural water evaporation is a green method to generate electrical energy. However, correlations between nanochannels constructed from generation materials and output electrical performances are unclear. In this paper, NiAl layered double hydroxide/SiO 2 (NiAl-LDH/SiO 2 - x nm) composites as power g...

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Veröffentlicht in:Sustainable energy & fuels 2022-11, Vol.6 (22), p.51-511
Hauptverfasser: Qu, Jiangying, Tu, Jingjing, Guan, Chunqian, Gao, Feng, Zang, Yunhao
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Zusammenfassung:Natural water evaporation is a green method to generate electrical energy. However, correlations between nanochannels constructed from generation materials and output electrical performances are unclear. In this paper, NiAl layered double hydroxide/SiO 2 (NiAl-LDH/SiO 2 - x nm) composites as power generation materials with tunable nanochannels are designed using NiAl-LDH as the template and SiO 2 as the coated layer. The nanochannel size is tunable in a certain range by the SiO 2 coated thickness ( x nm) on the surface of the NiAl-LDH. When the coated thickness of SiO 2 increases across the series of 0, 4, 9, and 14 nm, the nanochannel sizes built from NiAl-LDH/SiO 2 - x nm ( x = 0, 4, 9, 14) are 3.524, 3.186, 2.397, and 3.674 nm, respectively. The open-circuit voltage ( V oc ) of the natural water evaporation generator (NWEG) exhibits an opposite trend compared to the nanochannel sizes of generation materials. When a nanochannel of 2.397 nm is constructed using NiAl-LDH/SiO 2 -9 nm, the NWEG exhibits a maximum V oc of 1.40 V, current density of 356 μA m −2 , and power density of 0.498 mW m −2 . This work reveals that a smaller nanochannel increases the concentration of counter ions and decreases fluid drag from electrical double layer (EDL) overlapping, which results in a higher electric potential. NiAl-LDH/SiO 2 stacks were used to construct different nanochannels and a smaller nanochannel resulted in a higher electric potential.
ISSN:2398-4902
DOI:10.1039/d2se01181f