Establishment of different aliphatic amines-based rapid self-healing Mg(OH) metallogels: exploring the morphology, rheology and intriguing semiconducting Schottky diode characteristics

Different aliphatic amine (including triethylamine (TEA), ethylenediamine (EN), N , N , N ′, N ′-tetramethylethylenediamine (TEMED), diethylenetriamine (DETA), triethylenetetramine (TETA)) directed Mg( ii )-metallogels have been successfully achieved. Amines with single or multiple N-site(s) are uti...

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Veröffentlicht in:New journal of chemistry 2023-03, Vol.47 (1), p.4752-476
Hauptverfasser: Majumdar, Santanu, Pal, Baishakhi, Lepcha, Gerald, Sundar Das, Krishna, Pal, Indrajit, Ray, Partha Pratim, Dey, Biswajit
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Zusammenfassung:Different aliphatic amine (including triethylamine (TEA), ethylenediamine (EN), N , N , N ′, N ′-tetramethylethylenediamine (TEMED), diethylenetriamine (DETA), triethylenetetramine (TETA)) directed Mg( ii )-metallogels have been successfully achieved. Amines with single or multiple N-site(s) are utilized for the origination of stable Mg( ii )-metallogels. Exhaustive rheological investigations establish the mechanical stability of the Mg( ii )-metallogels. The thixotropic properties of the rheological experiments clarify the self-healing nature of different Mg( ii )-metallogels. The morphological variations of different aliphatic-amine-directed metallogels are verified through scanning electronic microscopic images. The presence of metallogel-forming chemicals has been experimentally checked through elemental analyses. The electrical properties of the self-healable Mg( ii )-metallogel-based systems have been explored. The I - V characteristics of different metallogels show a Schottky device nature for a gel-directed sandwich configuration with an ITO/metallogels/Al structure. The metallogel-mediated fabricated metal-semiconductor junction devices show very prominent rectification ratios (on-off ratio). Different aliphatic-amine-based rapid self-healing Mg( ii )-metallogels have been established through exploring their morphology, rheology and intriguing semiconducting Schottky diode characteristics.
ISSN:1144-0546
1369-9261
DOI:10.1039/d2nj06029a