Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in GaSSe monolayer
Two-dimensional chalcogenides could play an important role in solving the short channel effect and extending Moore's law in the post-Moore era due to their excellent performances in the spintronics and optoelectronics fields. In this paper, based on theoretical calculations combining density fu...
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Veröffentlicht in: | Physical chemistry chemical physics : PCCP 2022-06, Vol.24 (25), p.15376-15388 |
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Zusammenfassung: | Two-dimensional chalcogenides could play an important role in solving the short channel effect and extending Moore's law in the post-Moore era due to their excellent performances in the spintronics and optoelectronics fields. In this paper, based on theoretical calculations combining density functional theory and non-equilibrium Green's function, we have systematically explored the intrinsic mobility in the Ga
2
SSe monolayer and quantum transport properties of sub-10 nm Ga
2
SSe field-effect transistors (FET). Interestingly, the Ga
2
SSe monolayer presents high intrinsic electron mobility up to 10
4
cm
2
(V s)
−1
. It is highlighted that the intrinsic mobility in the Ga
2
SSe monolayer is significantly restrained by phonon scattering, where the out-of-plane acoustic mode and high-frequency optic phonon mode are found predominantly coupled with the electrons. As a result, the n-type doping sub-10 nm Ga
2
SSe FETs represent distinguished transport properties. In particular, even the gate length is shortened to 3 nm, the on-state current, delay time and power consumption of the n-type doping Ga
2
SSe FET along the armchair direction can reach the International Technology Roadmap for Semiconductor industry standards for high-performance requirements. Our present study paves the way for the application of Ga
2
SSe monolayers in ultra-small sized FETs in the post-silicon era.
The Janus Ga
2
SSe monolayer presents high intrinsic electron mobility and outstanding properties in sub-10 nm field-effect transistors based on theoretical calculations by combining density functional theory and non-equilibrium Green's function. |
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ISSN: | 1463-9076 1463-9084 |
DOI: | 10.1039/d2cp01690g |