Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in GaSSe monolayer

Two-dimensional chalcogenides could play an important role in solving the short channel effect and extending Moore's law in the post-Moore era due to their excellent performances in the spintronics and optoelectronics fields. In this paper, based on theoretical calculations combining density fu...

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Veröffentlicht in:Physical chemistry chemical physics : PCCP 2022-06, Vol.24 (25), p.15376-15388
Hauptverfasser: Sa, Baisheng, Shen, Xiaotian, Cai, Shuchang, Cui, Zhou, Xiong, Rui, Xu, Chao, Wen, Cuilian, Wu, Bo
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Zusammenfassung:Two-dimensional chalcogenides could play an important role in solving the short channel effect and extending Moore's law in the post-Moore era due to their excellent performances in the spintronics and optoelectronics fields. In this paper, based on theoretical calculations combining density functional theory and non-equilibrium Green's function, we have systematically explored the intrinsic mobility in the Ga 2 SSe monolayer and quantum transport properties of sub-10 nm Ga 2 SSe field-effect transistors (FET). Interestingly, the Ga 2 SSe monolayer presents high intrinsic electron mobility up to 10 4 cm 2 (V s) −1 . It is highlighted that the intrinsic mobility in the Ga 2 SSe monolayer is significantly restrained by phonon scattering, where the out-of-plane acoustic mode and high-frequency optic phonon mode are found predominantly coupled with the electrons. As a result, the n-type doping sub-10 nm Ga 2 SSe FETs represent distinguished transport properties. In particular, even the gate length is shortened to 3 nm, the on-state current, delay time and power consumption of the n-type doping Ga 2 SSe FET along the armchair direction can reach the International Technology Roadmap for Semiconductor industry standards for high-performance requirements. Our present study paves the way for the application of Ga 2 SSe monolayers in ultra-small sized FETs in the post-silicon era. The Janus Ga 2 SSe monolayer presents high intrinsic electron mobility and outstanding properties in sub-10 nm field-effect transistors based on theoretical calculations by combining density functional theory and non-equilibrium Green's function.
ISSN:1463-9076
1463-9084
DOI:10.1039/d2cp01690g