Fermi-level depinning of 2D transition metal dichalcogenide transistors

Recently, mainstream silicon (Si)-based materials and complementary metal oxide semiconductor (CMOS) technology have been used in developing extremely tiny sized (of a few nanometers) devices. However, with the reduction of transistor characteristic dimensions, many new challenges such as the short...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2021-09, Vol.9 (35), p.1147-11427
Hauptverfasser:	Chen, Ruo-Si, Ding, Guanglong, Zhou, Ye, Han, Su-Ting
Format:	Artikel
Sprache:	eng
Schlagworte:	Chalcogenides CMOS Contact resistance Semiconductor devices Semiconductor materials Silicon Transistors Transition metal compounds
Online-Zugang:	Volltext
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