Exploring benzylic -C(sp)-boron-silicon and boron-tin centers as a synthetic platform
A stepwise build-up of multi-substituted C sp 3 carbon centers is an attractive, conceptually simple, but often synthetically challenging type of disconnection. To this end, this report describes how gem -α,α-dimetalloid-substituted benzylic reagents bearing boron/silicon or boron/tin substituent se...
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Veröffentlicht in: | Chemical science (Cambridge) 2021-08, Vol.12 (31), p.1514-1521 |
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Zusammenfassung: | A stepwise build-up of multi-substituted C
sp
3
carbon centers is an attractive, conceptually simple, but often synthetically challenging type of disconnection. To this end, this report describes how
gem
-α,α-dimetalloid-substituted benzylic reagents bearing boron/silicon or boron/tin substituent sets are an excellent stepping stone towards diverse substitution patterns. These
gem
-dimetalloids were readily accessed, either by known carbenoid insertion into C-B bonds or by the newly developed scalable deprotonation/metallation approach. Highly chemoselective transformations of either the C-Si (or C-Sn) or the C-B bonds in the newly formed
gem
-C
sp
3
centers have been achieved through a set of approaches, with a particular focus on exploiting the synthetically versatile polarity reversal in organometalloids by λ
3
-aryliodanes. Of particular note is the metal-free arylation of the C-Si (or C-Sn) bonds in such
gem
-dimetalloids
via
the iodane-guided C-H coupling approach. DFT calculations show that this transfer of the (α-Bpin)benzyl group proceeds
via
unusual [5,5]-sigmatropic rearrangement and is driven by the high-energy iodine(
iii
) center. As a complementary tool, the
gem
-dimetalloid C-B bond is shown to undergo a potent and chemoselective Suzuki-Miyaura arylation with diverse Ar-Cl, thanks to the development of the reactive
gem
-α,α-silyl/BF
3
K building blocks.
This work explores divergent reactivity of the benzylic
gem
-boron-silicon and boron-tin double nucleophiles, including the arylation of the C-B bond with Ar-Cl, along with a complementary oxidative λ
3
-iodane-guided arylation of the C-Si/Sn moiety. |
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ISSN: | 2041-6520 2041-6539 |
DOI: | 10.1039/d1sc01741a |