Effect of the number of nitrogen dopants on the electronic and magnetic properties of graphitic and pyridinic N-doped graphene - a density-functional study

Doping with nitrogen atom is an effective way to modify the electronic and magnetic properties of graphene. In this paper, we studied the effect of the number of dopant atoms on the electronic and magnetic properties of the two most common nitrogen bond configurations in N-doped graphene, that is, graphitic and pyridinic, using density functional theory (DFT). We found that the formation of graphitic and pyridinic configurations can initiate the transition of the electronic properties of graphene from semimetal to metal with n-type conductivity for the graphitic configuration and p-type conductivity for the pyridinic configuration. The formation of a bandgap-like structure was observed in both configurations. The bandgap increased with the increase in the number of dopant atoms. We also observed that the formation of graphitic configuration did not cause a transition to the magnetic properties of graphene even though the number of dopant atoms was increased. In the pyridinic configuration, the increase in the number of dopant atoms caused graphene to be paramagnetic, with the remarkable total magnetic moment of 0.400 μ B per cell in the pyridinic-N 3 model. This study provides a deeper understanding of the modification of electronic and magnetic properties of N-doped graphene by controlling the bond configuration and the number of nitrogen dopants. The number of dopant atoms is a parameter that can effectively tune the electronic and magnetic properties of graphitic and pyridinic N-doped graphene.