High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Trisilylamine (TSA), an exemplary chlorine and carbon-free commercial silylamine precursor, is well-known to induce improvements in the process and properties of silicon nitride (SiN x ) thin films grown using atomic layer deposition (ALD). Herein, we report a TSA homolog, tris(disilanyl)amine (TDSA), as a novel chlorine and carbon-free precursor for the deposition of highly etch resistant SiN x thin films having a high growth rate at a low temperature (