All MoS based 2D/0D localized unipolar heterojunctions as flexible broadband (UV-vis-NIR) photodetectors
This report demonstrates the fabrication of all MoS 2 based 2D/0D unipolar heterojunctions using a simple one pot hydrothermal process and their utilization in a flexible broadband photodetector covering the spectral range from the ultraviolet to the near infrared region. The discontinuous depositio...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-09, Vol.8 (33), p.11593-1162 |
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creator | Selamneni, Venkatarao Ganeshan, Sankalp Koduvayur Sahatiya, Parikshit |
description | This report demonstrates the fabrication of all MoS
2
based 2D/0D unipolar heterojunctions using a simple one pot hydrothermal process and their utilization in a flexible broadband photodetector covering the spectral range from the ultraviolet to the near infrared region. The discontinuous deposition of 0D MoS
2
, which has absorbance in the UV region, on 2D MoS
2
, having absorbance in the visible and near-infrared (NIR) regions, enables broadband detection. Further, contact engineering was performed wherein both the metal contacts were fabricated on 2D MoS
2
, thereby enabling the effective capture of photogenerated carriers. Also, a unipolar junction formed due to the Fermi level difference between 2D and 0D MoS
2
produces a localized electric field that helps in the efficacious separation of photogenerated electron-hole pairs. The responsivity values of the fabricated photodetector were calculated to be 7.56 mA W
−1
, 12.8 mA W
−1
, and 3.95 mA W
−1
in the UV, visible and NIR regions, respectively, indicating that the fabricated device is more sensitive towards the visible region. A detailed understanding of the photodetection mechanism of this unique heterostructure is presented using bandgap theory and trap states. The successful demonstration of such a cost-effective, scalable 2D/0D based broadband photodetector should lead to potential applications in optoelectronics, security, and wearable electronics.
In this work, we demonstrate, for the first time, a one-pot synthesized MoS2 based 2D/0D flexible broadband (UV-vis-NIR) photodetector. |
doi_str_mv | 10.1039/d0tc02651d |
format | Article |
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2
based 2D/0D unipolar heterojunctions using a simple one pot hydrothermal process and their utilization in a flexible broadband photodetector covering the spectral range from the ultraviolet to the near infrared region. The discontinuous deposition of 0D MoS
2
, which has absorbance in the UV region, on 2D MoS
2
, having absorbance in the visible and near-infrared (NIR) regions, enables broadband detection. Further, contact engineering was performed wherein both the metal contacts were fabricated on 2D MoS
2
, thereby enabling the effective capture of photogenerated carriers. Also, a unipolar junction formed due to the Fermi level difference between 2D and 0D MoS
2
produces a localized electric field that helps in the efficacious separation of photogenerated electron-hole pairs. The responsivity values of the fabricated photodetector were calculated to be 7.56 mA W
−1
, 12.8 mA W
−1
, and 3.95 mA W
−1
in the UV, visible and NIR regions, respectively, indicating that the fabricated device is more sensitive towards the visible region. A detailed understanding of the photodetection mechanism of this unique heterostructure is presented using bandgap theory and trap states. The successful demonstration of such a cost-effective, scalable 2D/0D based broadband photodetector should lead to potential applications in optoelectronics, security, and wearable electronics.
In this work, we demonstrate, for the first time, a one-pot synthesized MoS2 based 2D/0D flexible broadband (UV-vis-NIR) photodetector.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/d0tc02651d</identifier><language>eng</language><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-09, Vol.8 (33), p.11593-1162</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Selamneni, Venkatarao</creatorcontrib><creatorcontrib>Ganeshan, Sankalp Koduvayur</creatorcontrib><creatorcontrib>Sahatiya, Parikshit</creatorcontrib><title>All MoS based 2D/0D localized unipolar heterojunctions as flexible broadband (UV-vis-NIR) photodetectors</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>This report demonstrates the fabrication of all MoS
2
based 2D/0D unipolar heterojunctions using a simple one pot hydrothermal process and their utilization in a flexible broadband photodetector covering the spectral range from the ultraviolet to the near infrared region. The discontinuous deposition of 0D MoS
2
, which has absorbance in the UV region, on 2D MoS
2
, having absorbance in the visible and near-infrared (NIR) regions, enables broadband detection. Further, contact engineering was performed wherein both the metal contacts were fabricated on 2D MoS
2
, thereby enabling the effective capture of photogenerated carriers. Also, a unipolar junction formed due to the Fermi level difference between 2D and 0D MoS
2
produces a localized electric field that helps in the efficacious separation of photogenerated electron-hole pairs. The responsivity values of the fabricated photodetector were calculated to be 7.56 mA W
−1
, 12.8 mA W
−1
, and 3.95 mA W
−1
in the UV, visible and NIR regions, respectively, indicating that the fabricated device is more sensitive towards the visible region. A detailed understanding of the photodetection mechanism of this unique heterostructure is presented using bandgap theory and trap states. The successful demonstration of such a cost-effective, scalable 2D/0D based broadband photodetector should lead to potential applications in optoelectronics, security, and wearable electronics.
In this work, we demonstrate, for the first time, a one-pot synthesized MoS2 based 2D/0D flexible broadband (UV-vis-NIR) photodetector.</description><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNp9UE1LAzEUDKJgqb14F-JND7HJZpPdPZa2aqEqqPW65JOmxM2SpKL-ehcUvTmXeQMzw2MAOCX4imDaTDXOChecEX0ARgVmGFWMloe_d8GPwSSlHR5QE17zZgS2M-_hXXiCUiSjYbGY4gX0QQnvPge971wfvIhwa7KJYbfvVHahS1AkaL15d9IbKGMQWopOw4vNC3pzCd2vHi9hvw056CGncojpBBxZ4ZOZ_PAYbK6Xz_NbtH64Wc1naxQJpRkRUhnbWCwMlUwQRdnwaaGaumJWEiU5LxtTl5wIoqmVFBta1QrbimFjSVPSMTj_7o1JtX10ryJ-tH_LtL22g-fsPw_9ArCcYhQ</recordid><startdate>20200907</startdate><enddate>20200907</enddate><creator>Selamneni, Venkatarao</creator><creator>Ganeshan, Sankalp Koduvayur</creator><creator>Sahatiya, Parikshit</creator><scope/></search><sort><creationdate>20200907</creationdate><title>All MoS based 2D/0D localized unipolar heterojunctions as flexible broadband (UV-vis-NIR) photodetectors</title><author>Selamneni, Venkatarao ; Ganeshan, Sankalp Koduvayur ; Sahatiya, Parikshit</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-r133t-117ef9f0ae3b5a1c358162c9875fb1cb6649e8461a1d3fb30e378c0f750ef1943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Selamneni, Venkatarao</creatorcontrib><creatorcontrib>Ganeshan, Sankalp Koduvayur</creatorcontrib><creatorcontrib>Sahatiya, Parikshit</creatorcontrib><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Selamneni, Venkatarao</au><au>Ganeshan, Sankalp Koduvayur</au><au>Sahatiya, Parikshit</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>All MoS based 2D/0D localized unipolar heterojunctions as flexible broadband (UV-vis-NIR) photodetectors</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2020-09-07</date><risdate>2020</risdate><volume>8</volume><issue>33</issue><spage>11593</spage><epage>1162</epage><pages>11593-1162</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>This report demonstrates the fabrication of all MoS
2
based 2D/0D unipolar heterojunctions using a simple one pot hydrothermal process and their utilization in a flexible broadband photodetector covering the spectral range from the ultraviolet to the near infrared region. The discontinuous deposition of 0D MoS
2
, which has absorbance in the UV region, on 2D MoS
2
, having absorbance in the visible and near-infrared (NIR) regions, enables broadband detection. Further, contact engineering was performed wherein both the metal contacts were fabricated on 2D MoS
2
, thereby enabling the effective capture of photogenerated carriers. Also, a unipolar junction formed due to the Fermi level difference between 2D and 0D MoS
2
produces a localized electric field that helps in the efficacious separation of photogenerated electron-hole pairs. The responsivity values of the fabricated photodetector were calculated to be 7.56 mA W
−1
, 12.8 mA W
−1
, and 3.95 mA W
−1
in the UV, visible and NIR regions, respectively, indicating that the fabricated device is more sensitive towards the visible region. A detailed understanding of the photodetection mechanism of this unique heterostructure is presented using bandgap theory and trap states. The successful demonstration of such a cost-effective, scalable 2D/0D based broadband photodetector should lead to potential applications in optoelectronics, security, and wearable electronics.
In this work, we demonstrate, for the first time, a one-pot synthesized MoS2 based 2D/0D flexible broadband (UV-vis-NIR) photodetector.</abstract><doi>10.1039/d0tc02651d</doi><tpages>1</tpages></addata></record> |
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source | Royal Society Of Chemistry Journals 2008- |
title | All MoS based 2D/0D localized unipolar heterojunctions as flexible broadband (UV-vis-NIR) photodetectors |
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