Solution processed vertical p-channel thin film transistors using copper() thiocyanate
Here, we present a strategy for the realization of p-channel inorganic thin film transistors (TFTs) based on vertically stacked contacts and a copper( i ) thiocyanate (CuSCN) semiconductor. The CuSCN semiconductor was generated by a simple low-temperature ( ca. 100 °C) solution-based process. Utiliz...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-04, Vol.8 (16), p.5587-5593 |
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| container_end_page | 5593 |
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| container_issue | 16 |
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| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
| container_volume | 8 |
| creator | Ji, Yena Lee, Seonjeong Lee, Han Ju Choi, Kyoung Soon Jeon, Cheolho Lee, Keun Hyung Hong, Kihyon |
| description | Here, we present a strategy for the realization of p-channel inorganic thin film transistors (TFTs) based on vertically stacked contacts and a copper(
i
) thiocyanate (CuSCN) semiconductor. The CuSCN semiconductor was generated by a simple low-temperature (
ca.
100 °C) solution-based process. Utilizing the vertical architecture, channel length was determined by the thickness of the CuSCN film. This readily endows transistors with ultrashort channel lengths ( |
| doi_str_mv | 10.1039/d0tc00815j |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_rsc_p</sourceid><recordid>TN_cdi_rsc_primary_d0tc00815j</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2396200542</sourcerecordid><originalsourceid>FETCH-LOGICAL-c344t-dccb2dfe4a3214b3659b3fb77b2c68d4d6da4d56bfcc624e7cbee856c0dfdb3d3</originalsourceid><addsrcrecordid>eNp90M9LwzAUB_AgCo65i3ch4kWFapqkaXuU-ZuBB6fXkrwkrqNLa5IK--_tnMybp_fgfXjv8UXoOCVXKWHltSYRCCnSbLmHRpRkJMkzxvd3PRWHaBLCkpCNEoUoR-j9tW36WLcOd74FE4LR-Mv4WINscJfAQjpnGhwXtcO2blY4eulCHWLrA-5D7T4wtF1n_PnFBrWwlk5Gc4QOrGyCmfzWMXq7v5tPH5PZy8PT9GaWAOM8JhpAUW0Nl4ymXDGRlYpZleeKgig010JLrjOhLICg3OSgjCkyAURbrZhmY3S23Tt8_9mbEKtl23s3nKwoKwUlJON0UJdbBb4NwRtbdb5eSb-uUlJtoqtuyXz6E93zgE-22AfYub9oh_npf_Oq05Z9A3gqeIw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2396200542</pqid></control><display><type>article</type><title>Solution processed vertical p-channel thin film transistors using copper() thiocyanate</title><source>Royal Society Of Chemistry Journals 2008-</source><creator>Ji, Yena ; Lee, Seonjeong ; Lee, Han Ju ; Choi, Kyoung Soon ; Jeon, Cheolho ; Lee, Keun Hyung ; Hong, Kihyon</creator><creatorcontrib>Ji, Yena ; Lee, Seonjeong ; Lee, Han Ju ; Choi, Kyoung Soon ; Jeon, Cheolho ; Lee, Keun Hyung ; Hong, Kihyon</creatorcontrib><description>Here, we present a strategy for the realization of p-channel inorganic thin film transistors (TFTs) based on vertically stacked contacts and a copper(
i
) thiocyanate (CuSCN) semiconductor. The CuSCN semiconductor was generated by a simple low-temperature (
ca.
100 °C) solution-based process. Utilizing the vertical architecture, channel length was determined by the thickness of the CuSCN film. This readily endows transistors with ultrashort channel lengths (<700 nm) to afford delivering drain current greatly exceeding that of conventional planar TFTs. Thus, high normalized transconductance of 0.84 S m
−1
and current density of 248 mA cm
−2
can be achieved for CuSCN-based vertical TFTs. To further improve the device's performance, we doped SnCl
2
into the semiconductor film. By doping SnCl
2
into CuSCN, shallow acceptor states that could induce additional holes were generated above the valence band maximum. The SnCl
2
-doped TFTs showed enlarged transconductance and current density values of 1.8 S m
−1
and 541 mA cm
−2
, respectively, which are comparable with those of other high performance vertical transistors. The p-channel inorganic TFTs developed in this study can open up exciting opportunities in complementary circuits, display switching, and flexible electronics.
p-Channel vertical thin film transistors with copper(
i
) thiocyanate were fabricated by a low temperature solution process.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/d0tc00815j</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Contact resistance ; Copper ; Current density ; Flexible components ; Low temperature ; Semiconductor devices ; Thickness ; Thin film transistors ; Thin films ; Thiocyanates ; Tin chloride ; Transconductance ; Transistors ; Valence band</subject><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-04, Vol.8 (16), p.5587-5593</ispartof><rights>Copyright Royal Society of Chemistry 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-dccb2dfe4a3214b3659b3fb77b2c68d4d6da4d56bfcc624e7cbee856c0dfdb3d3</citedby><cites>FETCH-LOGICAL-c344t-dccb2dfe4a3214b3659b3fb77b2c68d4d6da4d56bfcc624e7cbee856c0dfdb3d3</cites><orcidid>0000-0003-4066-9991 ; 0000-0001-5445-3871</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27907,27908</link.rule.ids></links><search><creatorcontrib>Ji, Yena</creatorcontrib><creatorcontrib>Lee, Seonjeong</creatorcontrib><creatorcontrib>Lee, Han Ju</creatorcontrib><creatorcontrib>Choi, Kyoung Soon</creatorcontrib><creatorcontrib>Jeon, Cheolho</creatorcontrib><creatorcontrib>Lee, Keun Hyung</creatorcontrib><creatorcontrib>Hong, Kihyon</creatorcontrib><title>Solution processed vertical p-channel thin film transistors using copper() thiocyanate</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>Here, we present a strategy for the realization of p-channel inorganic thin film transistors (TFTs) based on vertically stacked contacts and a copper(
i
) thiocyanate (CuSCN) semiconductor. The CuSCN semiconductor was generated by a simple low-temperature (
ca.
100 °C) solution-based process. Utilizing the vertical architecture, channel length was determined by the thickness of the CuSCN film. This readily endows transistors with ultrashort channel lengths (<700 nm) to afford delivering drain current greatly exceeding that of conventional planar TFTs. Thus, high normalized transconductance of 0.84 S m
−1
and current density of 248 mA cm
−2
can be achieved for CuSCN-based vertical TFTs. To further improve the device's performance, we doped SnCl
2
into the semiconductor film. By doping SnCl
2
into CuSCN, shallow acceptor states that could induce additional holes were generated above the valence band maximum. The SnCl
2
-doped TFTs showed enlarged transconductance and current density values of 1.8 S m
−1
and 541 mA cm
−2
, respectively, which are comparable with those of other high performance vertical transistors. The p-channel inorganic TFTs developed in this study can open up exciting opportunities in complementary circuits, display switching, and flexible electronics.
p-Channel vertical thin film transistors with copper(
i
) thiocyanate were fabricated by a low temperature solution process.</description><subject>Contact resistance</subject><subject>Copper</subject><subject>Current density</subject><subject>Flexible components</subject><subject>Low temperature</subject><subject>Semiconductor devices</subject><subject>Thickness</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Thiocyanates</subject><subject>Tin chloride</subject><subject>Transconductance</subject><subject>Transistors</subject><subject>Valence band</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp90M9LwzAUB_AgCo65i3ch4kWFapqkaXuU-ZuBB6fXkrwkrqNLa5IK--_tnMybp_fgfXjv8UXoOCVXKWHltSYRCCnSbLmHRpRkJMkzxvd3PRWHaBLCkpCNEoUoR-j9tW36WLcOd74FE4LR-Mv4WINscJfAQjpnGhwXtcO2blY4eulCHWLrA-5D7T4wtF1n_PnFBrWwlk5Gc4QOrGyCmfzWMXq7v5tPH5PZy8PT9GaWAOM8JhpAUW0Nl4ymXDGRlYpZleeKgig010JLrjOhLICg3OSgjCkyAURbrZhmY3S23Tt8_9mbEKtl23s3nKwoKwUlJON0UJdbBb4NwRtbdb5eSb-uUlJtoqtuyXz6E93zgE-22AfYub9oh_npf_Oq05Z9A3gqeIw</recordid><startdate>20200430</startdate><enddate>20200430</enddate><creator>Ji, Yena</creator><creator>Lee, Seonjeong</creator><creator>Lee, Han Ju</creator><creator>Choi, Kyoung Soon</creator><creator>Jeon, Cheolho</creator><creator>Lee, Keun Hyung</creator><creator>Hong, Kihyon</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4066-9991</orcidid><orcidid>https://orcid.org/0000-0001-5445-3871</orcidid></search><sort><creationdate>20200430</creationdate><title>Solution processed vertical p-channel thin film transistors using copper() thiocyanate</title><author>Ji, Yena ; Lee, Seonjeong ; Lee, Han Ju ; Choi, Kyoung Soon ; Jeon, Cheolho ; Lee, Keun Hyung ; Hong, Kihyon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-dccb2dfe4a3214b3659b3fb77b2c68d4d6da4d56bfcc624e7cbee856c0dfdb3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Contact resistance</topic><topic>Copper</topic><topic>Current density</topic><topic>Flexible components</topic><topic>Low temperature</topic><topic>Semiconductor devices</topic><topic>Thickness</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Thiocyanates</topic><topic>Tin chloride</topic><topic>Transconductance</topic><topic>Transistors</topic><topic>Valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ji, Yena</creatorcontrib><creatorcontrib>Lee, Seonjeong</creatorcontrib><creatorcontrib>Lee, Han Ju</creatorcontrib><creatorcontrib>Choi, Kyoung Soon</creatorcontrib><creatorcontrib>Jeon, Cheolho</creatorcontrib><creatorcontrib>Lee, Keun Hyung</creatorcontrib><creatorcontrib>Hong, Kihyon</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ji, Yena</au><au>Lee, Seonjeong</au><au>Lee, Han Ju</au><au>Choi, Kyoung Soon</au><au>Jeon, Cheolho</au><au>Lee, Keun Hyung</au><au>Hong, Kihyon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Solution processed vertical p-channel thin film transistors using copper() thiocyanate</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2020-04-30</date><risdate>2020</risdate><volume>8</volume><issue>16</issue><spage>5587</spage><epage>5593</epage><pages>5587-5593</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>Here, we present a strategy for the realization of p-channel inorganic thin film transistors (TFTs) based on vertically stacked contacts and a copper(
i
) thiocyanate (CuSCN) semiconductor. The CuSCN semiconductor was generated by a simple low-temperature (
ca.
100 °C) solution-based process. Utilizing the vertical architecture, channel length was determined by the thickness of the CuSCN film. This readily endows transistors with ultrashort channel lengths (<700 nm) to afford delivering drain current greatly exceeding that of conventional planar TFTs. Thus, high normalized transconductance of 0.84 S m
−1
and current density of 248 mA cm
−2
can be achieved for CuSCN-based vertical TFTs. To further improve the device's performance, we doped SnCl
2
into the semiconductor film. By doping SnCl
2
into CuSCN, shallow acceptor states that could induce additional holes were generated above the valence band maximum. The SnCl
2
-doped TFTs showed enlarged transconductance and current density values of 1.8 S m
−1
and 541 mA cm
−2
, respectively, which are comparable with those of other high performance vertical transistors. The p-channel inorganic TFTs developed in this study can open up exciting opportunities in complementary circuits, display switching, and flexible electronics.
p-Channel vertical thin film transistors with copper(
i
) thiocyanate were fabricated by a low temperature solution process.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/d0tc00815j</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-4066-9991</orcidid><orcidid>https://orcid.org/0000-0001-5445-3871</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2050-7526 |
| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-04, Vol.8 (16), p.5587-5593 |
| issn | 2050-7526 2050-7534 |
| language | eng |
| recordid | cdi_rsc_primary_d0tc00815j |
| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Contact resistance Copper Current density Flexible components Low temperature Semiconductor devices Thickness Thin film transistors Thin films Thiocyanates Tin chloride Transconductance Transistors Valence band |
| title | Solution processed vertical p-channel thin film transistors using copper() thiocyanate |
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