Solution processed vertical p-channel thin film transistors using copper() thiocyanate

Solution processed vertical p-channel thin film transistors using copper() thiocyanate

Here, we present a strategy for the realization of p-channel inorganic thin film transistors (TFTs) based on vertically stacked contacts and a copper( i ) thiocyanate (CuSCN) semiconductor. The CuSCN semiconductor was generated by a simple low-temperature ( ca. 100 °C) solution-based process. Utiliz...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-04, Vol.8 (16), p.5587-5593
Hauptverfasser: Ji, Yena, Lee, Seonjeong, Lee, Han Ju, Choi, Kyoung Soon, Jeon, Cheolho, Lee, Keun Hyung, Hong, Kihyon
Format: Artikel
Sprache:eng
Schlagworte:
Contact resistance
Copper
Current density
Flexible components
Low temperature
Semiconductor devices
Thickness
Thin film transistors
Thin films
Thiocyanates
Tin chloride
Transconductance
Transistors
Valence band
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Beschreibung
Zusammenfassung:Here, we present a strategy for the realization of p-channel inorganic thin film transistors (TFTs) based on vertically stacked contacts and a copper( i ) thiocyanate (CuSCN) semiconductor. The CuSCN semiconductor was generated by a simple low-temperature ( ca. 100 °C) solution-based process. Utilizing the vertical architecture, channel length was determined by the thickness of the CuSCN film. This readily endows transistors with ultrashort channel lengths (
ISSN:2050-7526
2050-7534
DOI:10.1039/d0tc00815j