Integrated selective nitrite reduction to ammonia with tetrahydroisoquinoline semi-dehydrogenation over a vacancy-rich Ni bifunctional electrode

The development of efficient electrocatalysts for nitrite reduction to ammonia, especially integrated with a value-added anodic reaction, is important. Herein, Ni nanosheet arrays with Ni vacancies (Ni-NSA-V Ni ) were demonstrated to exhibit outstanding electrocatalytic performances toward selective...

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Veröffentlicht in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2021-01, Vol.9 (1), p.239-243
Hauptverfasser: Wang, Changhong, Zhou, Wei, Sun, Zhaojun, Wang, Yuting, Zhang, Bin, Yu, Yifu
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Sprache:eng
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Zusammenfassung:The development of efficient electrocatalysts for nitrite reduction to ammonia, especially integrated with a value-added anodic reaction, is important. Herein, Ni nanosheet arrays with Ni vacancies (Ni-NSA-V Ni ) were demonstrated to exhibit outstanding electrocatalytic performances toward selective nitrite reduction to ammonia (faradaic efficiency: 88.9%; selectivity: 77.2%) and semi-dehydrogenation of tetrahydroisoquinolines (faradaic efficiency: 95.5%; selectivity: 98.0%). The origin and quantitative analyses of ammonia were performed by 15 N isotope labeling and 1 H NMR experiments. The decrease in electronic cloud density induced by the Ni vacancies was found to improve the NO 2 − adsorption and NH 3 desorption, leading to high nitrite-to-ammonia performance. In situ Raman results revealed the formation of Ni II /Ni III active species for anodic semi-dehydrogenation of tetrahydroisoquinolines on Ni-NSA-V Ni . Importantly, a Ni-NSA-V Ni |Ni-NSA-V Ni bifunctional two-electrode electrolyzer was constructed to simultaneously produce ammonia and dihydroisoquinoline with robust stability and high selectivity. Ni nanosheet arrays with Ni vacancies exhibited outstanding electrocatalytic performances toward selective nitrite reduction to ammonia and semi-dehydrogenation of tetrahydroisoquinolines.
ISSN:2050-7488
2050-7496
DOI:10.1039/d0ta09590g