Interfacial and bulk properties of hole transporting materials in perovskite solar cells: spiro-MeTAD spiro-OMeTAD
Two spiro-MeTAD compounds ( 1 and 2 ) were synthesized, characterized by experimental and quantum mechanical methods, and used as hole transporting materials (HTMs) in perovskite solar cells (PSCs). The new compounds differ from spiro-OMeTAD only by the presence of methyl substituents as compared to...
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Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2020-05, Vol.8 (17), p.8527-8539 |
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Zusammenfassung: | Two spiro-MeTAD compounds (
1
and
2
) were synthesized, characterized by experimental and quantum mechanical methods, and used as hole transporting materials (HTMs) in perovskite solar cells (PSCs). The new compounds differ from spiro-OMeTAD only by the presence of methyl substituents as compared to methoxy groups. This modification results in the absorption band blue shifting by ∼20 nm as compared to spiro-OMeTAD, increased glass transition temperature for 2, and reduced ionization potentials by 0.02-0.12 eV. Hole mobilities five times larger were obtained for spiro-MeTAD/spiro-MeTAD, which is maintained in the presence of additives. Despite this improvement,
J
-
V
measurements in PSCs resulted in a power conversion efficiency (PCE) of 17.2% and 17.05% for
1
and
2
HTMs, respectively, as compared to 19.24% for spiro-OMeTAD. Photoluminescence measurements of perovskite:HTM layers indicate much stronger quenching in the case of spiro-OMeTAD/spiro-MeTAD. These results point to the dominant importance of the perovskite:HTM interfacial properties as compared to the HTM hole-transport properties in the bulk. Given that improved hole-mobility and energy-level alignment are the main targets of the current research efforts in this domain, our results alert to the necessity to prioritize the improvement of perovskite-HTM interaction properties.
Improving perovskite-HTM interface properties in solar cells is more important than just improving HTM hole mobility. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/d0ta00623h |