Vertically-oriented MoS nanosheets for nonlinear optical devices

Transition metal dichalcogenides such as MoS 2 represent promising candidates for building blocks of ultra-thin nanophotonic devices. For such applications, vertically-oriented MoS 2 (v-MoS 2 ) nanosheets could be advantageous as compared to conventional horizontal MoS 2 (h-MoS 2 ) given that their inherent broken symmetry would favor an enhanced nonlinear response. However, the current lack of a controllable and reproducible fabrication strategy for v-MoS 2 limits the exploration of this potential. Here we present a systematic study of the growth of v-MoS 2 nanosheets based on the sulfurization of a pre-deposited Mo-metal seed layer. We demonstrate that the sulfurization process at high temperatures is driven by the diffusion of sulfur from the vapor-solid interface to the Mo seed layer. Furthermore, we verify an enhanced nonlinear response in the resulting v-MoS 2 nanostructures as compared to their horizontal counterparts. Our results represent a stepping stone towards the fabrication of low-dimensional TMD-based nanostructures for versatile nonlinear nanophotonic devices. We demonstrate a novel strategy for large-area fabrication of vertical MoS 2 exhibiting enhanced non-linear optical signal for applications in photonics.