Thiophene backbone-based polymers with electron-withdrawing pendant groups for application in organic thin-film transistors
Two thiophene backbone-based hole-transporting polymers, namely, poly[(2,2′-bithiophene-5,5′-diyl)- alt -(5,7-bis(2-butyloctyl)-4 H ,8 H -benzo[1,2- c :4,5- c ′]dithiophene-4,8-dione-1,3-diyl)] ( PT2-BDD ) and poly[(3,3′-difluoro-[2,2′-bithiophene]-5,5′-diyl)- alt -(5,7-bis(2-butyloctyl)-4 H ,8 H -b...
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Veröffentlicht in: | New journal of chemistry 2020-06, Vol.44 (22), p.9321-9327 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Two thiophene backbone-based hole-transporting polymers, namely, poly[(2,2′-bithiophene-5,5′-diyl)-
alt
-(5,7-bis(2-butyloctyl)-4
H
,8
H
-benzo[1,2-
c
:4,5-
c
′]dithiophene-4,8-dione-1,3-diyl)] (
PT2-BDD
) and poly[(3,3′-difluoro-[2,2′-bithiophene]-5,5′-diyl)-
alt
-(5,7-bis(2-butyloctyl)-4
H
,8
H
-benzo[1,2-
c
:4,5-
c
′]dithiophene-4,8-dione-1,3-diyl)] (
PF2-BDD
), were prepared by using electron-withdrawing pendant groups such as ketone and fluorine moieties. They both exhibited a planar backbone with efficient π conjugation, which is suitable for hole transport in organic thin-film transistors (OTFTs). However, the fluorinated one (
i.e.
,
PF2-BDD
), despite its perfect backbone planarity and strong intra- and intermolecular interactions, could not enhance the OTFT performance; due to its solvent resistance, electron negativity, and random orientation,
PF2-BDD
showed 10 times lower hole mobility than the non-fluorinated polymer (
i.e.
,
PT2-BDD
). Nonetheless, the two-dimensional grazing incidence X-ray diffraction and temperature-dependent absorption spectra of the synthesized polymers provided crucial information to understand the relationship between their hole transport behavior and molecular structure.
The suboptimal molecular ordering of by
PF2-BDD
quick freezing during hot-solution spin-coating hindered an efficient hole transport, whereas the more crystalline structure of
PT2-BDD
resulted in higher hole mobility in the corresponding OTFT. |
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ISSN: | 1144-0546 1369-9261 |
DOI: | 10.1039/d0nj01080d |