A hydrothermally synthesized MoSSe alloy with deep-shallow level conversion for enhanced performance of photodetectors

Photoelectric detectors based on binary transition metal chalcogenides have attracted widespread attention in recent years. However, due to the high-temperature synthesis of binary TMD, high-density deep-level defect states may be generated, leading to poor responsiveness or a long response time. Besides, the addition of an alloy will change the DLDSs from deep to shallow energy levels caused by S vacancies. In this paper, MoS 2(1− x ) Se 2 x nanostructures were synthesized by a hydrothermal method, and a novel type of photodetector was fabricated by using the synthesized material as a light sensitive material. The MoSSe-based photodetector not only has a high photocurrent, but also exhibits a wide spectral response in the range of 405 nm to 808 nm. At the same time, it can achieve a responsivity of 1.753 mA W −1 under 660 nm laser irradiation of 1.75 mW mm −2 . Therefore, this work can be considered as a method of constructing a new type of photodetector with a simple process and low cost. Schematic diagram of MoS 2(1− x ) Se 2 x synthesis and schematic diagram of device preparation.