Abnormal co-doping effect on the red persistent luminescence SrS:Eu,RE materials
Persistent luminescence materials are a reality in several applications. However, there is still a lack of efficient red-emitting materials. SrS:Eu 2+ phosphor is a potential candidate since its strong nephelauxetic effect shifts Eu 2+ 4f 6 5d 1 → 4f 7 to red, and its weak bond between strontium and...
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Veröffentlicht in: | Dalton transactions : an international journal of inorganic chemistry 2020-11, Vol.49 (45), p.16386-16393 |
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Zusammenfassung: | Persistent luminescence materials are a reality in several applications. However, there is still a lack of efficient red-emitting materials. SrS:Eu
2+
phosphor is a potential candidate since its strong nephelauxetic effect shifts Eu
2+
4f
6
5d
1
→ 4f
7
to red, and its weak bond between strontium and sulphide, due to the soft base-hard acid character, generates a high number of intrinsic defects. SrS:Eu
2+
,RE
3+
materials were efficiently prepared by two rounds of 22 min microwave-assisted solid-state synthesis. The highly crystalline purity and the material organization at the micro-scale were observed with X-ray powder diffraction and scanning electron microscopy, respectively. X-ray absorption spectroscopy revealed a low amount of Eu
2+
compared to Eu
3+
due to the efficient Eu
2+
photo-oxidation by X-ray irradiation in the high storage capability SrS host matrix. Electron paramagnetic resonance spectra confirmed that at least 50% of Eu
2+
ions in the material are photo-oxidized during excitation, reinforcing the previously established mechanisms. The RE
2+
energy level positioned very close to or into the conduction band led to an abnormal co-doping effect, with similar effects independent of the co-dopant. The high concentration of intrinsic defects in SrS indicates that the soft-hard pair host is an excellent approach to develop efficient persistent luminescence materials.
Rapidly prepared SrS:Eu
2+
,RE
3+
exhibits long red persistent luminescence independent of the rare earth co-dopant due to a high Schottky defect concentration. |
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ISSN: | 1477-9226 1477-9234 |
DOI: | 10.1039/d0dt01315c |