Theoretical prediction by DFT and experimental observation of heterocation-doping effects on hydrogen adsorption and migration over the CeO(111) surface
Hydrogen (H) atom adsorption and migration over the CeO 2 -based materials surface are of great importance because of its wide applications to catalytic reactions and electrochemical devices. Therefore, comprehensive knowledge for controlling the H atom adsorption and migration over CeO 2 -based mat...
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Veröffentlicht in: | Physical chemistry chemical physics : PCCP 2021-03, Vol.23 (8), p.459-4516 |
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Zusammenfassung: | Hydrogen (H) atom adsorption and migration over the CeO
2
-based materials surface are of great importance because of its wide applications to catalytic reactions and electrochemical devices. Therefore, comprehensive knowledge for controlling the H atom adsorption and migration over CeO
2
-based materials is crucially important. For controlling H atom adsorption and migration, we investigated irreducible divalent, trivalent, and quadrivalent heterocation-doping effects on H atom adsorption and migration over the CeO
2
(111) surface using density functional theory (DFT) calculations. Results revealed that the electron-deficient lattice oxygen (O
lat
) and the flexible CeO
2
matrix played key roles in strong adsorption of H atoms. Heterocations with smaller valence and smaller ionic radius induced the electron-deficient O
lat
. In addition, smaller cation doping enhanced the CeO
2
matrix flexibility. Moreover, we confirmed the influence of H atom adsorption controlled by doping on surface proton migration (
i.e.
surface protonics) and catalytic reaction involving surface protonics (NH
3
synthesis in an electric field). Results confirmed clear correlation between H atom adsorption energy and surface protonics.
The addition of dopants with a small ionic radius led to strong binding of H atoms, and the balance of H
+
reactivity (mobility) and H
+
coverage was fundamentally important for high H
+
conductivity and catalysis involving surface protonics. |
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ISSN: | 1463-9076 1463-9084 |
DOI: | 10.1039/d0cp05752e |