A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT). The design includes a bottom gate, a top field plate and an AlN dielectric layer, which realized broad transconductance (gate voltage operating between −3 V to 3 V) and high off-state breakdown voltage (620...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2019, Vol.7 (39), p.1275-1279
Hauptverfasser: Chen, Dingbo, Liu, Zhikun, Liang, Jinghan, Wan, Lijun, Xie, Zhuoliang, Li, Guoqiang
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium nitrides
Breakdown
Electric potential
Electron mobility
Gallium nitrides
Plates (structural members)
Repair & maintenance
Transconductance
Transistors
Voltage
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Zusammenfassung:This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT). The design includes a bottom gate, a top field plate and an AlN dielectric layer, which realized broad transconductance (gate voltage operating between −3 V to 3 V) and high off-state breakdown voltage (620 V @ V G = −10 V) simultaneously. The device shows great potential in the application of high-power electronics with good linear characteristics. This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT).
ISSN:2050-7526
2050-7534
DOI:10.1039/c9tc03718g