Excellent energy storage density and charge-discharge performance of a novel BiSrTiO-BiFeO thin film
Lead-free (1− x )Bi 0.2 Sr 0.7 TiO 3 - x BiFeO 3 ( x = 0-0.4, denoted as BST- x BFO) thin films were deposited on Pt(111)/Ti/SiO 2 /Si substrates by a sol-gel/spin coating technique and their microstructures, dielectric properties and energy storage were investigated in detail. A single perovskite p...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2019-09, Vol.7 (35), p.1891-19 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
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| Online-Zugang: | Volltext |
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| Zusammenfassung: | Lead-free (1−
x
)Bi
0.2
Sr
0.7
TiO
3
-
x
BiFeO
3
(
x
= 0-0.4, denoted as BST-
x
BFO) thin films were deposited on Pt(111)/Ti/SiO
2
/Si substrates by a sol-gel/spin coating technique and their microstructures, dielectric properties and energy storage were investigated in detail. A single perovskite phase and high-density microstructure are obtained in all thin films. Moreover, the hysteresis loss in the BST-
x
BFO system is relatively low accompanied by high breakdown strength. An excellent energy storage density of 48.5 J cm
−3
with an efficiency of 47.57% is obtained under high breakdown strength ∼4800 kV cm
−1
in a 0.9BST-0.1BFO thin film capacitor. This capacitor also presents excellent thermal stability with minimal variation of both the energy storage density ( |
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| ISSN: | 2050-7526 2050-7534 |
| DOI: | 10.1039/c9tc03032h |