A high performance electroformed single-crystallite VO threshold switch

Threshold switches (TSs) are an effective approach for resolving the sneak path problem within a memristor array. VO 2 is a promising material for fabricating high-performance TSs. Here we report a single crystal VO 2 -based TS device with high switching performance. The single crystal monoclinic VO 2 channel is obtained by electroforming in a composite vanadium oxide film consisting of VO 2 , V 2 O 5 and V 3 O 7 . The formation mechanism on single crystal VO 2 is thoroughly investigated by means of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The single crystal VO 2 -based TS device exhibits better switching performance than the polycrystalline monoclinic VO 2 counterpart. The TS device based on a single crystal channel with the (2&cmb.macr;11) orientation exhibits a steep turn-on voltage slope of