Two-step epitaxial growth of NbON (100) thin films on rutile-type TiO (101) substrates and reduction of residual carrier concentration by RF reactive sputtering

Two-step epitaxial growth of NbON (100) thin films on rutile-type TiO (101) substrates and reduction of residual carrier concentration by RF reactive sputtering

We demonstrate here the epitaxial growth of NbON (100) films on rutile-type TiO 2 (101) substrates. By the application of a 2-step growth method, we successfully minimized anion-related defects in the NbON films and reduced the residual carrier concentration by lowering the growth temperature. Two-s...

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Veröffentlicht in:CrystEngComm 2019-06, Vol.21 (23), p.3552-3556
Hauptverfasser: Kikuchi, Ryosuke, Nakamura, Toru, Kaneko, Yasushi, Hato, Kazuhito
Format: Artikel
Sprache:eng
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Zusammenfassung:We demonstrate here the epitaxial growth of NbON (100) films on rutile-type TiO 2 (101) substrates. By the application of a 2-step growth method, we successfully minimized anion-related defects in the NbON films and reduced the residual carrier concentration by lowering the growth temperature. Two-step growth makes it possible to grow NbON epitaxial films and minimize anion-related defects in the NbON films.
ISSN:1466-8033
DOI:10.1039/c9ce00478e