Diffusion doping route to plasmonic Si/SiOx nanoparticlesElectronic supplementary information (ESI) available. See DOI: 10.1039/c8ra03260b

Semiconductor nanoparticles (SNPs) are a valuable building block for functional materials. Capabilities for engineering of electronic structure of SNPs can be further improved with development of techniques of doping by diffusion, as post-synthetic introduction of impurities does not affect the nucleation and growth of SNPs. Diffusion of dopants from an external source also potentially allows for temporal control of radial distribution of impurities. In this paper we report on the doping of Si/SiO x SNPs by annealing particles in gaseous phosphorus. The technique can provide efficient incorporation of impurities, controllable with precursor vapor pressure. HRTEM and X-ray diffraction studies confirmed that obtained particles retain their nanocrystallinity. Elemental analysis revealed doping levels up to 10%. Electrical activity of the impurity was confirmed through thermopower measurements and observation of localized surface plasmon resonance in IR spectra. The plasmonic behavior of etched particles and EDX elemental mapping suggest uniform distribution of phosphorus in the crystalline silicon cores. Impurity activation efficiencies up to 34% were achieved, which indicate high electrical activity of thermodynamically soluble phosphorus in oxide-terminated nanosilicon. An electrically active impurity was introduced into Si/SiO x nanoparticles with high temperature annealing in phosphorus vapor.