Gate-tuned conductance of graphene-ribbon junctions with nanoscale width variationsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr10469g

To utilize graphene as interconnection electrodes in high-density nanoelectronic structures, the electrical stability of graphene should be guaranteed under nanometer-scale deviations. Graphene-ribbon (GR) junctions with accessible dimensions ( i.e. , sub-micrometer widths) are used in diverse interconnection electrode applications and should be characterized properly if they are to be applied in high-density nanoelectronics. Analyzing the effects of nanoscale GR width variations on the conductance of the entire graphene electrode is necessary for their proper characterization. Here, we diagnose the conductance and thermal effect of graphene electrode junctions constructed from GRs of various widths and directions under gate-tuned voltages. On applying partial gate voltages, we identify the effect of local potential variance on the entire graphene electrode junction. As a result, we were able to perceive precise and minute conductance variations for the entire graphene electrode, arising mainly from different sub-micrometer-scale widths of the GRs, which could not be distinguished using conventional global gating methods. On applying partial gate voltages, we were able to perceive precise and minute conductance variations for the entire graphene electrode, arising mainly from different sub-micrometer scale widths of the graphene ribbons (GRs), which could not be distinguished using conventional global gating methods.