Wurtzite CoO: a direct band gap oxide suitable for a photovoltaic absorberElectronic supplementary information (ESI) available. See DOI: 10.1039/c8cc06777e

Wurtzite CoO: a direct band gap oxide suitable for a photovoltaic absorberElectronic supplementary information (ESI) available. See DOI: 10.1039/c8cc06777e

A direct band gap of 1.6 eV has been identified in wurtzite CoO thin films, which matches the required value to achieve a theoretically high conversion efficiency solar cell. Its p-type conduction has been determined and an intense sub-gap absorption between 0.7 and 1.1 eV has been observed. Wurtzit...

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Hauptverfasser: Wang, Y, Ge, H. X, Chen, Y. P, Meng, X. Y, Ghanbaja, J, Horwat, D, Pierson, J. F
Format: Artikel
Sprache:eng
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Zusammenfassung:A direct band gap of 1.6 eV has been identified in wurtzite CoO thin films, which matches the required value to achieve a theoretically high conversion efficiency solar cell. Its p-type conduction has been determined and an intense sub-gap absorption between 0.7 and 1.1 eV has been observed. Wurtzite CoO is a p-type semiconductor with a direct band gap of 1.6 eV and an intense sub-gap absorption.
ISSN:1359-7345
1364-548X
DOI:10.1039/c8cc06777e