Modification of thermal conductivity and thermal boundary resistance of amorphous Si thin films by Al doping

We investigate the effects of Al doping on the thermal conductivity and thermal boundary resistance of a-Si thin films. Au/Al-doped a-Si/Si structures were prepared by depositing Al-doped amorphous Si films of different Al doping concentrations and thickness on Si substrates by magnetron sputtering. The thermal resistances of the structures were measured to calculate the thermal conductivities of the films. The thermal conductivities of the 150 nm-thick films were higher than those of 100 nm-thick films, and a sharp increase in thermal conductivity with increasing Al doping concentration was observed in the 150 nm-thick films but not in the 100 nm-thick films. Furthermore, the thermal boundary resistances at the two interfaces in the structures also increased with increasing Al doping concentration. Our findings could be used to tailor the thermal resistance of materials for thermal management in semiconductor devices as well as for development of thermal barrier coatings and thermoelectric materials with good performance. We investigate the effects of Al doping on the thermal conductivity and thermal boundary resistance of a-Si thin films.