1-Dimensional fiber-based field-effect transistors made by low-temperature photochemically activated sol-gel metal-oxide materials for electronic textiles
We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles). By using low-temperature and a solution process, dense, pinhole-free, and relatively uniform metal-oxide layers were successfully deposited on a 1-dimensional fiber substrate. Par...
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Veröffentlicht in: | RSC advances 2016-01, Vol.6 (22), p.18596-186 |
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creator | Park, Chang Jun Heo, Jae Sang Kim, Kyung-Tae Yi, Gyengmin Kang, Jingu Park, Jong S Kim, Yong-Hoon Park, Sung Kyu |
description | We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles). By using low-temperature and a solution process, dense, pinhole-free, and relatively uniform metal-oxide layers were successfully deposited on a 1-dimensional fiber substrate. Particularly, the atomic layer deposited aluminum oxide gate dielectric layer, deposited at 100 °C, exhibited an extremely low leakage current density of ∼10
−7
A cm
−2
and a high breakdown field of 4.1 MV cm
−1
. Furthermore, the indium oxide F-FETs, which are photochemically activated at a low temperature, showed a field-effect mobility and on/off ratio of 3.7 cm
2
V
−1
s
−1
and >10
6
, respectively, which we believe are the highest performance among fiber-type FETs reported to date. Based on these results, it is believed that the metal-oxide F-FETs may provide a basic building block to accomplish 2-D woven e-textiles in the future, provided further combining with the weaving and interconnection technologies.
We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles). |
doi_str_mv | 10.1039/c5ra21613c |
format | Article |
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−7
A cm
−2
and a high breakdown field of 4.1 MV cm
−1
. Furthermore, the indium oxide F-FETs, which are photochemically activated at a low temperature, showed a field-effect mobility and on/off ratio of 3.7 cm
2
V
−1
s
−1
and >10
6
, respectively, which we believe are the highest performance among fiber-type FETs reported to date. Based on these results, it is believed that the metal-oxide F-FETs may provide a basic building block to accomplish 2-D woven e-textiles in the future, provided further combining with the weaving and interconnection technologies.
We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles).</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/c5ra21613c</identifier><language>eng</language><subject>Aluminum oxide ; Deposition ; Electronics ; Fibers ; Field effect transistors ; Metal oxides ; Semiconductor devices ; Textiles</subject><ispartof>RSC advances, 2016-01, Vol.6 (22), p.18596-186</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c286t-c1fb9778d3ab8453ab32ebe404896e3f946e0d981b146447d667c646029126853</citedby><cites>FETCH-LOGICAL-c286t-c1fb9778d3ab8453ab32ebe404896e3f946e0d981b146447d667c646029126853</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Park, Chang Jun</creatorcontrib><creatorcontrib>Heo, Jae Sang</creatorcontrib><creatorcontrib>Kim, Kyung-Tae</creatorcontrib><creatorcontrib>Yi, Gyengmin</creatorcontrib><creatorcontrib>Kang, Jingu</creatorcontrib><creatorcontrib>Park, Jong S</creatorcontrib><creatorcontrib>Kim, Yong-Hoon</creatorcontrib><creatorcontrib>Park, Sung Kyu</creatorcontrib><title>1-Dimensional fiber-based field-effect transistors made by low-temperature photochemically activated sol-gel metal-oxide materials for electronic textiles</title><title>RSC advances</title><description>We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles). By using low-temperature and a solution process, dense, pinhole-free, and relatively uniform metal-oxide layers were successfully deposited on a 1-dimensional fiber substrate. Particularly, the atomic layer deposited aluminum oxide gate dielectric layer, deposited at 100 °C, exhibited an extremely low leakage current density of ∼10
−7
A cm
−2
and a high breakdown field of 4.1 MV cm
−1
. Furthermore, the indium oxide F-FETs, which are photochemically activated at a low temperature, showed a field-effect mobility and on/off ratio of 3.7 cm
2
V
−1
s
−1
and >10
6
, respectively, which we believe are the highest performance among fiber-type FETs reported to date. Based on these results, it is believed that the metal-oxide F-FETs may provide a basic building block to accomplish 2-D woven e-textiles in the future, provided further combining with the weaving and interconnection technologies.
We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles).</description><subject>Aluminum oxide</subject><subject>Deposition</subject><subject>Electronics</subject><subject>Fibers</subject><subject>Field effect transistors</subject><subject>Metal oxides</subject><subject>Semiconductor devices</subject><subject>Textiles</subject><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNpNkU9LxDAQxYsouKx78S7kKEI0SdO0PS7rX1gQRM8lTSduJG1qktXdr-KnNbqizmHmwfx4A_Oy7JiSc0ry-kIVXjIqaK72sgkjXGBGRL3_Tx9msxBeSCpRUCboJPug-NL0MATjBmmRNi143MoAXdJgOwxag4ooepmYEJ0PqJcdoHaLrHvHEfoRvIxrD2hcuejUCnqjpLVbJFU0bzImq-AsfgaLeojSYrcxyaBPG2-kDUg7j8CmK94NRqEIm2gshKPsQKc1zH7mNHu6vnpc3OLl_c3dYr7EilUiYkV1W5dl1eWyrXiRes6gBU54VQvIdc0FkK6uaEu54LzshCiV4IKwOr2gKvJpdrrzHb17XUOITW-CAmvlAG4dGlqR9D-ac5bQsx2qvAvBg25Gb3rptw0lzVcGzaJ4mH9nsEjwyQ72Qf1yfxnln91qhgw</recordid><startdate>20160101</startdate><enddate>20160101</enddate><creator>Park, Chang Jun</creator><creator>Heo, Jae Sang</creator><creator>Kim, Kyung-Tae</creator><creator>Yi, Gyengmin</creator><creator>Kang, Jingu</creator><creator>Park, Jong S</creator><creator>Kim, Yong-Hoon</creator><creator>Park, Sung Kyu</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20160101</creationdate><title>1-Dimensional fiber-based field-effect transistors made by low-temperature photochemically activated sol-gel metal-oxide materials for electronic textiles</title><author>Park, Chang Jun ; Heo, Jae Sang ; Kim, Kyung-Tae ; Yi, Gyengmin ; Kang, Jingu ; Park, Jong S ; Kim, Yong-Hoon ; Park, Sung Kyu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c286t-c1fb9778d3ab8453ab32ebe404896e3f946e0d981b146447d667c646029126853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Aluminum oxide</topic><topic>Deposition</topic><topic>Electronics</topic><topic>Fibers</topic><topic>Field effect transistors</topic><topic>Metal oxides</topic><topic>Semiconductor devices</topic><topic>Textiles</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Chang Jun</creatorcontrib><creatorcontrib>Heo, Jae Sang</creatorcontrib><creatorcontrib>Kim, Kyung-Tae</creatorcontrib><creatorcontrib>Yi, Gyengmin</creatorcontrib><creatorcontrib>Kang, Jingu</creatorcontrib><creatorcontrib>Park, Jong S</creatorcontrib><creatorcontrib>Kim, Yong-Hoon</creatorcontrib><creatorcontrib>Park, Sung Kyu</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Chang Jun</au><au>Heo, Jae Sang</au><au>Kim, Kyung-Tae</au><au>Yi, Gyengmin</au><au>Kang, Jingu</au><au>Park, Jong S</au><au>Kim, Yong-Hoon</au><au>Park, Sung Kyu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1-Dimensional fiber-based field-effect transistors made by low-temperature photochemically activated sol-gel metal-oxide materials for electronic textiles</atitle><jtitle>RSC advances</jtitle><date>2016-01-01</date><risdate>2016</risdate><volume>6</volume><issue>22</issue><spage>18596</spage><epage>186</epage><pages>18596-186</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles). By using low-temperature and a solution process, dense, pinhole-free, and relatively uniform metal-oxide layers were successfully deposited on a 1-dimensional fiber substrate. Particularly, the atomic layer deposited aluminum oxide gate dielectric layer, deposited at 100 °C, exhibited an extremely low leakage current density of ∼10
−7
A cm
−2
and a high breakdown field of 4.1 MV cm
−1
. Furthermore, the indium oxide F-FETs, which are photochemically activated at a low temperature, showed a field-effect mobility and on/off ratio of 3.7 cm
2
V
−1
s
−1
and >10
6
, respectively, which we believe are the highest performance among fiber-type FETs reported to date. Based on these results, it is believed that the metal-oxide F-FETs may provide a basic building block to accomplish 2-D woven e-textiles in the future, provided further combining with the weaving and interconnection technologies.
We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles).</abstract><doi>10.1039/c5ra21613c</doi><tpages>5</tpages></addata></record> |
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language | eng |
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source | Royal Society Of Chemistry Journals 2008- |
subjects | Aluminum oxide Deposition Electronics Fibers Field effect transistors Metal oxides Semiconductor devices Textiles |
title | 1-Dimensional fiber-based field-effect transistors made by low-temperature photochemically activated sol-gel metal-oxide materials for electronic textiles |
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