1-Dimensional fiber-based field-effect transistors made by low-temperature photochemically activated sol-gel metal-oxide materials for electronic textiles

We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles). By using low-temperature and a solution process, dense, pinhole-free, and relatively uniform metal-oxide layers were successfully deposited on a 1-dimensional fiber substrate. Par...

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Veröffentlicht in:RSC advances 2016-01, Vol.6 (22), p.18596-186
Hauptverfasser: Park, Chang Jun, Heo, Jae Sang, Kim, Kyung-Tae, Yi, Gyengmin, Kang, Jingu, Park, Jong S, Kim, Yong-Hoon, Park, Sung Kyu
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container_end_page 186
container_issue 22
container_start_page 18596
container_title RSC advances
container_volume 6
creator Park, Chang Jun
Heo, Jae Sang
Kim, Kyung-Tae
Yi, Gyengmin
Kang, Jingu
Park, Jong S
Kim, Yong-Hoon
Park, Sung Kyu
description We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles). By using low-temperature and a solution process, dense, pinhole-free, and relatively uniform metal-oxide layers were successfully deposited on a 1-dimensional fiber substrate. Particularly, the atomic layer deposited aluminum oxide gate dielectric layer, deposited at 100 °C, exhibited an extremely low leakage current density of ∼10 −7 A cm −2 and a high breakdown field of 4.1 MV cm −1 . Furthermore, the indium oxide F-FETs, which are photochemically activated at a low temperature, showed a field-effect mobility and on/off ratio of 3.7 cm 2 V −1 s −1 and >10 6 , respectively, which we believe are the highest performance among fiber-type FETs reported to date. Based on these results, it is believed that the metal-oxide F-FETs may provide a basic building block to accomplish 2-D woven e-textiles in the future, provided further combining with the weaving and interconnection technologies. We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles).
doi_str_mv 10.1039/c5ra21613c
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By using low-temperature and a solution process, dense, pinhole-free, and relatively uniform metal-oxide layers were successfully deposited on a 1-dimensional fiber substrate. Particularly, the atomic layer deposited aluminum oxide gate dielectric layer, deposited at 100 °C, exhibited an extremely low leakage current density of ∼10 −7 A cm −2 and a high breakdown field of 4.1 MV cm −1 . Furthermore, the indium oxide F-FETs, which are photochemically activated at a low temperature, showed a field-effect mobility and on/off ratio of 3.7 cm 2 V −1 s −1 and &gt;10 6 , respectively, which we believe are the highest performance among fiber-type FETs reported to date. Based on these results, it is believed that the metal-oxide F-FETs may provide a basic building block to accomplish 2-D woven e-textiles in the future, provided further combining with the weaving and interconnection technologies. 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By using low-temperature and a solution process, dense, pinhole-free, and relatively uniform metal-oxide layers were successfully deposited on a 1-dimensional fiber substrate. Particularly, the atomic layer deposited aluminum oxide gate dielectric layer, deposited at 100 °C, exhibited an extremely low leakage current density of ∼10 −7 A cm −2 and a high breakdown field of 4.1 MV cm −1 . Furthermore, the indium oxide F-FETs, which are photochemically activated at a low temperature, showed a field-effect mobility and on/off ratio of 3.7 cm 2 V −1 s −1 and &gt;10 6 , respectively, which we believe are the highest performance among fiber-type FETs reported to date. Based on these results, it is believed that the metal-oxide F-FETs may provide a basic building block to accomplish 2-D woven e-textiles in the future, provided further combining with the weaving and interconnection technologies. We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles).</abstract><doi>10.1039/c5ra21613c</doi><tpages>5</tpages></addata></record>
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source Royal Society Of Chemistry Journals 2008-
subjects Aluminum oxide
Deposition
Electronics
Fibers
Field effect transistors
Metal oxides
Semiconductor devices
Textiles
title 1-Dimensional fiber-based field-effect transistors made by low-temperature photochemically activated sol-gel metal-oxide materials for electronic textiles
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