1-Dimensional fiber-based field-effect transistors made by low-temperature photochemically activated sol-gel metal-oxide materials for electronic textiles

We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles). By using low-temperature and a solution process, dense, pinhole-free, and relatively uniform metal-oxide layers were successfully deposited on a 1-dimensional fiber substrate. Particularly, the atomic layer deposited aluminum oxide gate dielectric layer, deposited at 100 °C, exhibited an extremely low leakage current density of ∼10 −7 A cm −2 and a high breakdown field of 4.1 MV cm −1 . Furthermore, the indium oxide F-FETs, which are photochemically activated at a low temperature, showed a field-effect mobility and on/off ratio of 3.7 cm 2 V −1 s −1 and >10 6 , respectively, which we believe are the highest performance among fiber-type FETs reported to date. Based on these results, it is believed that the metal-oxide F-FETs may provide a basic building block to accomplish 2-D woven e-textiles in the future, provided further combining with the weaving and interconnection technologies. We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles).