Incorporation of SnO2 nanoparticles in PMMA for performance enhancement of a transparent organic resistive memory device

We report the electrical bistable characteristics of a hybrid polymer/inorganic nanocomposite device consisting of SnO 2 nanoparticles (NPs) embedded in an insulating polymethylmethacrylate (PMMA) layer sandwiched between conductive indium tin oxide (ITO) and aluminium (Al) electrodes. X-ray diffraction measurements were performed for assessment of the crystallographic nature of SnO 2 nanoparticles while the microstructural nature of SnO 2 nanoparticles embedded in the PMMA matrix was confirmed using transmission electron microscopy. Detailed electrical characterizations suggested an influence of the NP concentration on the switching characteristics of the Al/SnO 2 -PMMA/ITO memory devices. The highest resistance ratio > 10 3 ( R off / R on ) was observed in a device with 2 weight% SnO 2 NPs. The retention tests on the fabricated device demonstrated the consistency in current of the ON/OFF state even after 10 4 s. The conduction mechanisms of the fabricated nanocomposite based memory cell were discussed on the basis of experimental data using a charge trapping-detrapping mechanism in the NPs. Our findings offer a feasible and low cost chemical approach to fabricate a transparent and high density RS memory device. Various sizes of SnO 2 NPs have been successfully synthesized and embedded into the insulating PMMA layer sandwiched between ITO and Al electrodes.