Raman study of α-quartz-type Ge1−xSixO2 (0 < x ≤ 0.067) single crystals for piezoelectric applications
As potential candidates for high temperature piezoelectric materials, α-quartz-type Ge 1− x Si x O 2 (0 < x ≤ 0.067) single crystals grown by the flux method were structurally and thermally characterized. When compared to pure α-GeO 2 , room temperature polarized Raman spectra contained additiona...
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Sprache: | eng |
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Zusammenfassung: | As potential candidates for high temperature piezoelectric materials, α-quartz-type Ge
1−
x
Si
x
O
2
(0 <
x
≤ 0.067) single crystals grown by the flux method were structurally and thermally characterized. When compared to pure α-GeO
2
, room temperature polarized Raman spectra contained additional lines which have been assigned from density functional theory on a α-Ge
0.833
Si
0.167
O
2
solid solution. The results highlight that Si-O-Ge bridges were involved. Moreover, a linear relationship between the wavenumber position of the main A
1
Raman lines and the SiO
2
substitution rate
x
was also observed. The analysis of the temperature dependence of unpolarized Raman signals of an α-Ge
1−
x
Si
x
O
2
phase with
x
= 0.067 pointed out the high-thermal stability up to 1000 °C of the α-quartz-like structure related to the lack of a libration mode and to the absence of a softening mode with temperature.
Raman lines due to Ge-O-Si bridges in α-Ge
1−
x
Si
x
O
2
single crystals are identified with the help of polarized Raman and calculations. |
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ISSN: | 2046-2069 |
DOI: | 10.1039/c5ra08051g |