Exciton band structure in layered MoSe2: from a monolayer to the bulk limit
We present the micro-photoluminescence (μPL) and micro-reflectance contrast (μRC) spectroscopy studies on thin films of MoSe 2 with layer thicknesses ranging from a monolayer (1L) up to 5L. The thickness dependent evolution of the ground and excited state excitonic transitions taking place at variou...
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Veröffentlicht in: | Nanoscale 2015-12, Vol.7 (48), p.2769-2775 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We present the micro-photoluminescence (μPL) and micro-reflectance contrast (μRC) spectroscopy studies on thin films of MoSe
2
with layer thicknesses ranging from a monolayer (1L) up to 5L. The thickness dependent evolution of the ground and excited state excitonic transitions taking place at various points of the Brillouin zone is determined. Temperature activated energy shifts and linewidth broadenings of the excitonic resonances in 1L, 2L and 3L flakes are accounted for by using standard formalisms previously developed for semiconductors. A peculiar shape of the optical response of the ground state (A) exciton in monolayer MoSe
2
is tentatively attributed to the appearance of a Fano-type resonance. Rather trivial and clearly decaying PL spectra of monolayer MoSe
2
with temperature confirm that the ground state exciton in this material is optically bright in contrast to a dark exciton ground state in monolayer WSe
2
.
Fano-resonance like shape of A-resonance in MoSe
2
monolayer indicates the effects of interactions between A-exciton and excited states of trion. |
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ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c5nr06782k |