Liquid-solid spinodal decomposition mediated synthesis of Sb2Se3 nanowires and their photoelectric behaviorElectronic supplementary information (ESI) available: Determination of the applied potential, the estimation of the thermodynamic reduction potential, and diffraction patterns at each temperature. See DOI: 10.1039/c5nr03461b
The convenient synthesis of one-dimensional nanostructures of chalcogenide compounds with a visible band-gap is an essential research topic in developing next-generation photoelectronic devices. In particular, the design of a theoretically predictable synthesis process provides great flexibility and...
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Sprache: | eng |
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Zusammenfassung: | The convenient synthesis of one-dimensional nanostructures of chalcogenide compounds with a visible band-gap is an essential research topic in developing next-generation photoelectronic devices. In particular, the design of a theoretically predictable synthesis process provides great flexibility and has a considerable ripple effect in nanotechnology. In this study, a novel rational growth approach is designed using the spinodal decomposition phenomenon for the synthesis of the Sb
2
Se
3
nanowires, which is based on the thermodynamic phase diagram. Using a stacked elemental layer (Sb/Sb-Se/Se) and heat treatment at 623 K for 30 min under an N
2
atmosphere, the vertically inclined one-dimensional nanostructures are experimentally demonstrated. An additional annealing process at 523 K in a vacuum effectively removed excess Se elements due to their high vapor pressure, resulting in highly dense single crystal Sb
2
Se
3
nanowire arrays. Adaption of our synthesis approach enables significantly improved photocurrent generation in the vertically stacked structure (glass/ITO/Sb
2
Se
3
nanowires/ITO/PEN) from 6.4 (dark) to under 690 μA (at 3 V under AM 1.5G). In addition, a photoelectrochemical test demonstrated their p-type conductivity and robust photocorrosion performance in 0.5 M H
2
SO
4
.
Vertically inclined Sb
2
Se
3
nanowires were synthesized from the Sb/Sb-Se/Se stacked elemental layer only by thermal annealing at 623 K. |
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ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c5nr03461b |