Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour depositionCCDC 1050091 (4), 1050516 (2) and 1050517 (3). For crystallographic data in CIF or other electronic format see DOI: 10.1039/c5nj00947b

The β-ketoimine ligand [(Me)CN(H){ i Pr}-CHC(Me)&z.dbd;O] ( L 1 H ) and the bis(β-ketoimine) ligands [(CH 2 ) 2 {N(H)C(Me)-CHC(R)&z.dbd;O} 2 ] ( L 2 H 2 , R = Me; L 3 H 2 , R = C 6 H 5 ) linked by ethylene bridges have been used to form aluminium and gallium complexes: [Al(L 1 )Et 2 ] ( 1 ), [Ga(L 1 ) 2 Cl] ( 2 ), [AlL 2 (O i Pr)] ( 3 ) and [GaL 3 Me] ( 4 ). The complexes were characterised by NMR spectroscopy, mass spectroscopy, and single crystal X-ray diffraction, with the exception of 1 which was isolated as an oil. Compounds 1-4 have been used for the first time as single source precursors for the deposition of Al 2 O 3 ( 1 , 3 ) and Ga 2 O 3 ( 2 , 4 ) respectively. Thin films were deposited via aerosol assisted (AA)CVD with toluene as the solvent. Synthesis of novel β-ketoiminate compounds (aluminium and gallium) which have been used for the first time as precursors in (AACVD).