Trap-limited charge recombination in intrinsic perovskite film and meso-superstructured perovskite solar cells and the passivation effect of the hole-transport material on trap states

Charge recombination dynamics in intrinsic perovskite film and in meso-superstructured perovskite solar cells have been systematically studied, which are found to be mediated by the energetic distribution of intra-gap trap states as described by the trap-limited recombination theory. Besides, the passivation effect of the hole-transport material on trap states is discussed. Charge recombination takes place in the perovskite phase or at the perovskite/HTM interface, which is mediated by intra-gap trap states.