Low-temperature VUV photoluminescence and thermoluminescence of UV excited afterglow phosphor Sr3AlxSi1−xO5:Ce3+,Ln3+ (Ln = Er, Nd, Sm, Dy and Tm)

Low-temperature (10 K) photoluminescence excitation and emission spectra of undoped Sr 3 SiO 5 as well as Ce 3+ and Eu 3+ single doped Sr 3 SiO 5 have been investigated. They show the host exciton band and the O 2− to Eu 3+ charge transfer band at 5.98 eV (207 nm) and 3.87 eV (320 nm) respectively....

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Hauptverfasser: Luo, Hongde, Bos, Adrie J. J, Dobrowolska, Anna, Dorenbos, Pieter
Format: Artikel
Sprache:eng ; jpn
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Zusammenfassung:Low-temperature (10 K) photoluminescence excitation and emission spectra of undoped Sr 3 SiO 5 as well as Ce 3+ and Eu 3+ single doped Sr 3 SiO 5 have been investigated. They show the host exciton band and the O 2− to Eu 3+ charge transfer band at 5.98 eV (207 nm) and 3.87 eV (320 nm) respectively. Low-temperature thermoluminescence measurements are reported for Ce 3+ and lanthanide (Er, Nd, Sm, Dy, Er and Tm) co-doped Sr 3 Al x Si 1− x O 5 . The results show that Ce 3+ is the recombination centre and Nd, Sm, Dy and Tm work as electron traps with trap depths of 0.95 eV, 1.89 eV, 1.02 eV, and 1.19 eV, respectively. Thermoluminescence excitation spectra of Sr 2.98 Al 0.02 Si 0.98 O 5 :0.01Ce 3+ ,0.01Dy 3+ show that the traps can be charged by 260 nm UV excitation. Low-temperature thermoluminescence measurements of Ce doped Sr 3 SiO 5 show that Ce 3+ is the recombination centre and Nd, Sm, Dy and Tm work as electron traps with trap depths of 0.95 eV, 1.89 eV, 1.02 eV, and 1.19 eV, respectively.
ISSN:1463-9076
1463-9084
DOI:10.1039/c5cp01710f