Effects of gradual oxidation of aromatic sulphur-heterocycle derivatives on multilevel memory data storage performanceElectronic supplementary information (ESI) available: The compositions of the small molecules, the memory device, TGA, energy levels for the three functional moieties, DFT molecular simulation results, stability tests of the devices, I-V curve. See DOI: 10.1039/c4tc02087a

Three symmetrical conjugated small molecules derived from phenothiazine (PTZ), PTZ-CN, PTZO-CN and PTZDO-CN, were designed and successfully synthesized for multilevel memory data storage. By reserving the terminal electron-accepting cyano moiety, the sulphur atom in phenothiazine (PTZ) was adjusted...

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Hauptverfasser: Liu, Zhaojun, Shi, Erbo, Wan, Yu, Li, Najun, Chen, Dongyun, Xu, Qingfeng, Li, Hua, Lu, Jianmei, Zhang, Keqin, Wang, Lihua
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Sprache:eng
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Zusammenfassung:Three symmetrical conjugated small molecules derived from phenothiazine (PTZ), PTZ-CN, PTZO-CN and PTZDO-CN, were designed and successfully synthesized for multilevel memory data storage. By reserving the terminal electron-accepting cyano moiety, the sulphur atom in phenothiazine (PTZ) was adjusted to different oxidation states, such as sulfide, sulfoxide, and sulfone, to tune the electron-accepting ability ( J. Liu et al. , Chem. Mater. , 2008, 20 , 4499 ). Therefore, a differentiated trap depth was achieved between the central sulphur-containing group and the terminal cyano groups when the molecules were charged. Devices based on PTZO-CN exhibited excellent ternary memory behaviour, while those based on PTZ-CN or PTZDO-CN only showed binary memory characteristics. Therefore, it is a viable approach to easily obtain multilevel memory organic materials by adjusting the difference between two electron-withdrawing groups in the conjugated molecular backbone through gradual oxidation of the central sulphur atom to achieve ternary memory performance. Three symmetrical conjugated small molecules derived from phenothiazine (PTZ), PTZ-CN, PTZO-CN and PTZDO-CN, were designed and successfully synthesized for multilevel memory data storage.
ISSN:2050-7526
2050-7534
DOI:10.1039/c4tc02087a