Precise control of chemical vapor deposition graphene layer thickness using NixCu1−x alloysElectronic supplementary information (ESI) available. See DOI: 10.1039/c4tc01979b

We investigated a simple but effective method to precisely control the desired number of graphene layers on the Ni x Cu 1− x alloy substrates by thermal chemical vapor deposition. Our method could be utilized to precisely control the number of graphene layers without altering growth conditions such as growth temperature and the cooling rate. We investigated a simple but effective method to precisely control the desired number of graphene layers on the Ni x Cu 1− x alloy substrates by thermal chemical vapor deposition.