Soluble polycyclosilane-polysiloxane hybrid material and silicon thin film with optical properties at 193 nm and etch selectivityElectronic supplementary information (ESI) available: Experimental procedures, products characterization data, NMR (1H, 13C, 29Si) spectra, extinction coefficient (k), and details of X-ray crystallographic data. CCDC 984675 and 984676. For ESI and crystallographic data in CIF or other electronic format See DOI: 10.1039/c4tc01917b

A polycyclosilane precursor was synthesized to develop soluble silicon materials and silicon thin films with optical properties at 193 nm, high silicon content, and etch selectivity for O 2 and CF x plasmas. A new class of polycyclosilane-polysiloxane hybrid materials and their thin films exhibited good etch selectivity and good optical properties at 193 nm without organic absorbents. Silicon thin films that fulfil the needs of current semiconductor lithography were prepared from a new class of polycyclosilane-polysiloxane hybrid materials.