Nonvolatile memory devices based on carbon nano-dot doped poly(vinyl alcohol) composites with low operation voltage and high ON/OFF ratioElectronic supplementary information (ESI) available: Materials and methods section, PL spectra, XPS, Raman spectra of carbon nano-dots, and absorption of carbon nano-dots film. See DOI: 10.1039/c4ra16563b

Carbon nano-dots were synthesized by a hydrothermal method and integrated into the poly(vinyl alcohol) matrix as charge carrier trapping centers for nonvolatile memory devices. The devices with the configuration of ITO/carbon nano-dots-PVA/Ag exhibited bistable electrical switching at low voltage, long retention time and excellent reading stability. Carbon nano-dots were synthesized by a hydrothermal method and integrated into the poly(vinyl alcohol) matrix as charge carrier trapping centers for nonvolatile memory devices.