Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory

Electronic bipolar resistance switching (eBRS) in an Al/TiO x /Al structure, where the TiO x layer was reactively sputter-deposited, was examined in conjunction with a structural analysis using transmission electron microscopy. A thin (3-5 nm) insulating Al(Ti)O x layer was formed at the bottom Al electrode interface, which provided the necessary asymmetric potential barrier for the eBRS to emerge, whereas the top Al electrode interface appeared to have provided the fluent carrier (electron) injection. The set and reset switching were related to the trapping and detrapping of the carriers at the trap centers, the characteristic energy of which was ∼0.86 eV, across the entire electrode area. The general features of this material system as the feasible RS memory were insufficient: endurance cycle,