Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cc10209f

Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cc10209f

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO x RRAM devices could be one of t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Park, Sung Pyo, Yoon, Doo Hyun, Tak, Young Jun, Lee, Heesoo, Kim, Hyun Jae
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 9176
container_issue 44
container_start_page 9173
container_title
container_volume 51
creator Park, Sung Pyo
Yoon, Doo Hyun
Tak, Young Jun
Lee, Heesoo
Kim, Hyun Jae
description Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO x RRAM devices could be one of the candidates for the development of low cost RRAM. Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide.
doi_str_mv 10.1039/c4cc10209f
format Article
fullrecord <record><control><sourceid>rsc</sourceid><recordid>TN_cdi_rsc_primary_c4cc10209f</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>c4cc10209f</sourcerecordid><originalsourceid>FETCH-rsc_primary_c4cc10209f3</originalsourceid><addsrcrecordid>eNqFkD1PwzAQhi0EEuVjYUc6NhhSEpJAywqFdmIoA2KpXPvSHPJHZDuh-c_8CByExIAEt9zHc3rv1TF2kqXjLM2nl6IQIkuv0mm1w0ZZfl0kZTF52R3qcprc5EW5zw68f0tjZOVkxD7mtKlVDw4V8bVC8O8URE1mAx1xaGruEYLjxlMga6D1A6p76ewGDTTo7JYkAhmorR5maFsP3EjQrQqUKN6jQwmP_NU8bZN11JPxmicfqEOIytJq4EKg96BRW9eDxI5iP1MogrOGBPi2aRRqNIFHTqayTvMvQ-ez5eICeMdJDf7HsESE-6fFLfz-yRHbq7jyePydD9npw-z5bp44L1aNIx3FVz_r-f_87C--amSVfwKBPoR0</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cc10209f</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Park, Sung Pyo ; Yoon, Doo Hyun ; Tak, Young Jun ; Lee, Heesoo ; Kim, Hyun Jae</creator><creatorcontrib>Park, Sung Pyo ; Yoon, Doo Hyun ; Tak, Young Jun ; Lee, Heesoo ; Kim, Hyun Jae</creatorcontrib><description>Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO x RRAM devices could be one of the candidates for the development of low cost RRAM. Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide.</description><identifier>ISSN: 1359-7345</identifier><identifier>EISSN: 1364-548X</identifier><identifier>DOI: 10.1039/c4cc10209f</identifier><language>eng</language><creationdate>2015-05</creationdate><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Park, Sung Pyo</creatorcontrib><creatorcontrib>Yoon, Doo Hyun</creatorcontrib><creatorcontrib>Tak, Young Jun</creatorcontrib><creatorcontrib>Lee, Heesoo</creatorcontrib><creatorcontrib>Kim, Hyun Jae</creatorcontrib><title>Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cc10209f</title><description>Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO x RRAM devices could be one of the candidates for the development of low cost RRAM. Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide.</description><issn>1359-7345</issn><issn>1364-548X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqFkD1PwzAQhi0EEuVjYUc6NhhSEpJAywqFdmIoA2KpXPvSHPJHZDuh-c_8CByExIAEt9zHc3rv1TF2kqXjLM2nl6IQIkuv0mm1w0ZZfl0kZTF52R3qcprc5EW5zw68f0tjZOVkxD7mtKlVDw4V8bVC8O8URE1mAx1xaGruEYLjxlMga6D1A6p76ewGDTTo7JYkAhmorR5maFsP3EjQrQqUKN6jQwmP_NU8bZN11JPxmicfqEOIytJq4EKg96BRW9eDxI5iP1MogrOGBPi2aRRqNIFHTqayTvMvQ-ez5eICeMdJDf7HsESE-6fFLfz-yRHbq7jyePydD9npw-z5bp44L1aNIx3FVz_r-f_87C--amSVfwKBPoR0</recordid><startdate>20150519</startdate><enddate>20150519</enddate><creator>Park, Sung Pyo</creator><creator>Yoon, Doo Hyun</creator><creator>Tak, Young Jun</creator><creator>Lee, Heesoo</creator><creator>Kim, Hyun Jae</creator><scope/></search><sort><creationdate>20150519</creationdate><title>Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cc10209f</title><author>Park, Sung Pyo ; Yoon, Doo Hyun ; Tak, Young Jun ; Lee, Heesoo ; Kim, Hyun Jae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-rsc_primary_c4cc10209f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Sung Pyo</creatorcontrib><creatorcontrib>Yoon, Doo Hyun</creatorcontrib><creatorcontrib>Tak, Young Jun</creatorcontrib><creatorcontrib>Lee, Heesoo</creatorcontrib><creatorcontrib>Kim, Hyun Jae</creatorcontrib></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Sung Pyo</au><au>Yoon, Doo Hyun</au><au>Tak, Young Jun</au><au>Lee, Heesoo</au><au>Kim, Hyun Jae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cc10209f</atitle><date>2015-05-19</date><risdate>2015</risdate><volume>51</volume><issue>44</issue><spage>9173</spage><epage>9176</epage><pages>9173-9176</pages><issn>1359-7345</issn><eissn>1364-548X</eissn><abstract>Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO x RRAM devices could be one of the candidates for the development of low cost RRAM. Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide.</abstract><doi>10.1039/c4cc10209f</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1359-7345
ispartof
issn 1359-7345
1364-548X
language eng
recordid cdi_rsc_primary_c4cc10209f
source Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection
title Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cc10209f
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T14%3A55%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-rsc&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Highly%20reliable%20switching%20via%20phase%20transition%20using%20hydrogen%20peroxide%20in%20homogeneous%20and%20multi-layered%20GaZnOx-based%20resistive%20random%20access%20memory%20devicesElectronic%20supplementary%20information%20(ESI)%20available.%20See%20DOI:%2010.1039/c4cc10209f&rft.au=Park,%20Sung%20Pyo&rft.date=2015-05-19&rft.volume=51&rft.issue=44&rft.spage=9173&rft.epage=9176&rft.pages=9173-9176&rft.issn=1359-7345&rft.eissn=1364-548X&rft_id=info:doi/10.1039/c4cc10209f&rft_dat=%3Crsc%3Ec4cc10209f%3C/rsc%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true