Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cc10209f

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnO x RRAM devices could be one of the candidates for the development of low cost RRAM. Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnO x ) resistive random access memory (RRAM) devices using hydrogen peroxide.