Synthesis and characterization of p-n homojunction-containing zinc oxide nanowiresElectronic supplementary information (ESI) available. See DOI: 10.1039/c3nr31639d

We illustrate a simple method to synthesize highly ordered ZnO axial p-n homojunction-containing nanowires using a low temperature method, and on a variety of substrates. X-ray diffraction, scanning transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy are used to reveal high quality single-crystalline wires with a [001] growth direction. The study of electrical transport through a single nanowire based device and cathodoluminescence via scanning transmission electron microscopy demonstrates that an axial p-n junction exists within each ZnO nanowire. This represents the first low temperature synthesis of axial p-n homojunction-containing ZnO nanowires with uniform and controllable diameters. A simple low-temperature solution method to synthesize highly ordered ZnO axial p-n homojunction-containing nanowires on different substrates has been developed.