CVD of pure copper films from novel iso-ureate complexesElectronic supplementary information (ESI) available: Supporting information includes the EXD spectra for Cu films grown at 250 °C and 300 °C as well as and XPS spectra for the same films (pre- and post-A-etching). A powder X-ray diffraction spectra of the Ru substrate used throughout this study is also included. CCDC 901461-901465. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c3dt00104k

We report the synthesis and characterisation of a new family of copper( i ) metal precursors based around alkoxy- N , N ′-di-alkyl-ureate ligands, and their subsequent application in the production of pure copper thin films. The molecular structure of the complexes bis-copper( i )(methoxy- N , N ′-di-isopropylureate) ( 1 ) and bis-copper( i )(methoxy- N , N ′-di-cyclohexylureate)( 5 ) are described, as determined by single crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted complex 1 as a possible copper CVD precursor. Low pressure chemical vapour deposition (LP-CVD) was employed using precursor 1 , to synthesise thin films of metallic copper on ruthenium substrates under an atmosphere of hydrogen (H 2 ). Analysis of the thin films deposited at substrate temperatures of 225 °C, 250 °C and 300 °C, respectively, by SEM and AFM reveal the films to be continuous and pin hole free, and show the presence of temperature dependent growth features on the surface of the thin films. Energy dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (PXRD) and X-ray photoelectron spectroscopy (XPS) all show the films to be high purity metallic copper. New copper( I ) ureate precursors have been developed and used in the low pressure chemical vapour deposition (LP-CVD) of continuous, pin-hole free thin films of pure copper metal, on ruthenium substrates.