Controllable growth of laterally aligned zinc oxide nanorod arrays on a selected surface of the silicon substrate by a catalyst-free vapor solid process a technique for growing nanocircuits

We report a simple and effective vapor deposition method for directly growing ultra-long, laterally aligned, zinc oxide (ZnO) nanorod arrays only on the side edges of a bare silicon (Si) substrate without using any catalysts and precursors. The growth on the top surface of the substrate is restrained by controlling the flow of source vapor in a tube furnace through the chemical vapor solid process. The optimized growth parameters have been thoroughly investigated and identified. Direct growth of laterally aligned ZnO nanowire arrays on the desired surface of the substrate is successfully achieved. A vapor solid mechanism with source vapor flow rate control has been proposed to explain the synthesis: ZnO nanodots first form on the bare Si substrate side edges due to the local large binding energy and high zinc (Zn) vapor concentration, and then nanorods epitaxially grow from the nanodots. In addition, the lateral, ultra-long ZnO nanorods grown on orthogonal silicon microelectrodes are achieved and could be expected to find important applications in a bottom-up way of fabricating the next generation nanoelectronics. We report a simple and effective vapor deposition method for directly growing ultra-long, laterally aligned, zinc oxide (ZnO) nanorod arrays only on the side edges of a bare silicon (Si) substrate without using any catalysts and precursors.