High-throughput fabrication of large-scale highly ordered ZnO nanorod arrays via three-beam interference lithographyElectronic supplementary information (ESI) available. Comparison of 2BIL and 3BIL, schematic illustration of the fabrication sequence of large-scale highly ordered ZnO NRAs via 3BIL and HTS, different alignment types lead to different PR hole patterns, standing wave effect in 3BIL, and low contrast PR hole template and its negative effect on ZnO NRAs growth. See DOI: 10.1039/c3ce41

Large-scale highly ordered ZnO nanorod arrays with precise period control and uniform distribution are easily fabricated via three-beam interference lithography, top anti-reflective coating and hydrothermal synthesis. This new method demonstrates an efficient way to fabricate large-scale highly ordered semiconductor nanorod arrays and could meet the needs of nanomaterial design, nanodevice optimization and nanosystem integration. Using three-beam interference lithography and hydrothermal synthesis, large-scale highly ordered ZnO nanorod arrays are easily fabricated at low cost.